Datasheet > MBRTA40040L

MBRTA40040L

更新时间： 2024-09-17 01:21:39

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	458K
描述
Low VF Silicon Power Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRTA40040L 数据手册

MBRTA40040(R)L

V_RRM= 40 V

I_F(AV)= 400 A

Low V_FSilicon Power

Schottky Diode

Features

• High Surge Capability

• Type 40 V V_RRM

Heavy Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Symbol

Conditions

Parameter

MBRTA40040(R)L Unit

V_RRM

V_RMS

V_DC

T_j

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Operating temperature

-55 to 150

°C

T_stg

Storage temperature

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Symbol

Conditions

Parameter

MBRTA40040(R)L Unit

I_F(AV)

I_FSM

T_C= 100 °C

Average forward current (per pkg)

Peak forward surge current (per leg)

400

t_p= 8.3 ms, half sine

3000

Maximum instantaneous forward voltage (per

leg)

V_F

_FM= 200 A, Tj = 25 °C

0.60

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

T_j= 25 °C

I_R

T_j= 100 °C

300

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R_ΘJC

0.35

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

12 3

中文翻译

下载PDF

与MBRTA40040L相关器件

型号	品牌	获取价格	描述	数据表
MBRTA40040RL	GENESIC	获取价格	Low VF Silicon Power Schottky Diode
MBRTA40045L	GENESIC	获取价格	Low VF Silicon Power Schottky Diode
MBRTA40045RL	GENESIC	获取价格	Low VF Silicon Power Schottky Diode
MBRTA500100	GENESIC	获取价格	Silicon Power Schottky Diode
MBRTA500100R	GENESIC	获取价格	Silicon Power Schottky Diode
MBRTA500150	GENESIC	获取价格	Silicon Power Schottky Diode
MBRTA500150R	GENESIC	获取价格	Silicon Power Schottky Diode
MBRTA50020	GENESIC	获取价格	Silicon Power Schottky Diode
MBRTA500200	GENESIC	获取价格	Silicon Power Schottky Diode
MBRTA500200R	GENESIC	获取价格	Silicon Power Schottky Diode