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MBRTA600100 PDF预览

MBRTA600100

更新时间: 2024-11-10 00:56:35
品牌 Logo 应用领域
GENESIC /
页数 文件大小 规格书
3页 398K
描述
Silicon Power Schottky Diode

MBRTA600100 数据手册

 浏览型号MBRTA600100的Datasheet PDF文件第2页浏览型号MBRTA600100的Datasheet PDF文件第3页 
MBRTA60045 thru MBRTA600100R  
VRRM = 45 V - 100 V  
IF(AV) = 600 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 45 V to 100 V VRRM  
Heavy Three Tower Package  
• Isolation Type Package  
• Electrically Isolated Base Plate  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBRTA60080(R)MBRTA600100(R)  
Unit  
Parameter  
Symbol  
MBRTA60045(R) MBRTA60060(R)  
Repetitive peak reverse  
voltage  
VRRM  
80  
100  
45  
60  
V
VRMS  
VDC  
Tj  
56  
70  
RMS reverse voltage  
32  
42  
V
V
80  
100  
DC blocking voltage  
Operating temperature  
Storage temperature  
45  
60  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 100 °C  
MBRTA60080(R)MBRTA600100(R)  
Parameter  
Symbol  
IF(AV)  
IFSM  
MBRTA60045(R) MBRTA60060(R)  
Unit  
A
Average forward current  
(per pkg)  
600  
4000  
0.84  
600  
4000  
0.84  
600  
4000  
0.70  
600  
4000  
0.75  
Peak forward surge current  
(per leg)  
tp = 8.3 ms, half sine  
IFM = 300 A, Tj = 25 °C  
A
Maximum instantaneous  
forward voltage (per leg)  
VF  
V
Tj = 25 °C  
Tj = 100 °C  
Tj = 150 °C  
1
1
1
1
Reverse current at rated  
DC blocking voltage (per  
leg)  
IR  
10  
50  
10  
50  
mA  
10  
50  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction - case (per leg)  
RΘJC  
0.28  
0.28  
0.28  
0.28  
°C/W  
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/  

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