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MBRS130LT3_07 PDF预览

MBRS130LT3_07

更新时间: 2024-02-16 13:24:20
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 96K
描述
Schottky Power Rectifier

MBRS130LT3_07 数据手册

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MBRS130LT3  
Preferred Device  
Schottky Power Rectifier  
Surface Mount Power Package  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification,  
or as free wheeling and polarity protection diodes, in surface mount  
applications where compact size and weight are critical to the  
system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERE  
30 VOLTS  
Features  
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T = 25°C)  
J
Small Compact Surface Mountable Package with J−Bend Leads  
Highly Stable Oxide Passivated Junction  
Guard−Ring for Stress Protection  
Pb−Free Package is Available  
Mechanical Characteristics  
SMB  
CASE 403A  
PLASTIC  
Case: Epoxy, Molded  
Weight: 95 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
MARKING DIAGRAM  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Cathode Polarity Band  
AYWW  
1BL3G  
G
1BL3  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MBRS130LT3  
MBRS130LT3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
SMB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 7  
MBRS130LT3/D  

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