MBRS130LT3
Preferred Device
Schottky Power Rectifier
Surface Mount Power Package
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
Features
• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T = 25°C)
J
• Small Compact Surface Mountable Package with J−Bend Leads
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
Mechanical Characteristics
SMB
CASE 403A
PLASTIC
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
MARKING DIAGRAM
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
AYWW
1BL3G
G
1BL3
A
Y
= Specific Device Code
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MBRS130LT3
MBRS130LT3G
SMB
2500/Tape & Reel
2500/Tape & Reel
SMB
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
November, 2006 − Rev. 7
MBRS130LT3/D