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MBRS130LT3G PDF预览

MBRS130LT3G

更新时间: 2024-02-03 16:37:41
品牌 Logo 应用领域
安森美 - ONSEMI 二极管光电二极管
页数 文件大小 规格书
6页 96K
描述
Schottky Power Rectifier

MBRS130LT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-214包装说明:R-PDSO-J2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.91其他特性:FREE WHEELING DIODE
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.445 VJESD-30 代码:R-PDSO-J2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向电流:1000 µA
反向测试电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MBRS130LT3G 数据手册

 浏览型号MBRS130LT3G的Datasheet PDF文件第2页浏览型号MBRS130LT3G的Datasheet PDF文件第3页浏览型号MBRS130LT3G的Datasheet PDF文件第4页浏览型号MBRS130LT3G的Datasheet PDF文件第5页浏览型号MBRS130LT3G的Datasheet PDF文件第6页 
MBRS130LT3  
Preferred Device  
Schottky Power Rectifier  
Surface Mount Power Package  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification,  
or as free wheeling and polarity protection diodes, in surface mount  
applications where compact size and weight are critical to the  
system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERE  
30 VOLTS  
Features  
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T = 25°C)  
J
Small Compact Surface Mountable Package with J−Bend Leads  
Highly Stable Oxide Passivated Junction  
Guard−Ring for Stress Protection  
Pb−Free Package is Available  
Mechanical Characteristics  
SMB  
CASE 403A  
PLASTIC  
Case: Epoxy, Molded  
Weight: 95 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
MARKING DIAGRAM  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Cathode Polarity Band  
AYWW  
1BL3G  
G
1BL3  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MBRS130LT3  
MBRS130LT3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
SMB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 7  
MBRS130LT3/D  

MBRS130LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MBRS130L ONSEMI

类似代替

Schottky Power Rectifier, Surface Mount, 1.0 A, 30 V
MBRS130LT3 ONSEMI

类似代替

Schottky Power Rectifier
B130LB-13-F DIODES

功能相似

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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