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MBRF10150CTR PDF预览

MBRF10150CTR

更新时间： 2024-10-01 01:23:07
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 724K
描述
10 Ampere Insulated Dual Common Anode Schottky Half Bridge Rectifiers

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MBRF10150CTR 数据手册

 浏览型号MBRF10150CTR的Datasheet PDF文件第2页 
MBRF10100CTR thru MBRF10200CTR  
®
MBRF10100CTR/MBRF10150CTR/MBRF10200CTR  
Pb Free Plating Product  
10 Ampere Insulated Dual Common Anode Schottky Half Bridge Rectifiers  
ITO-220AB  
Unit : inch (mm)  
Features  
ꢀ
.189(4.8)  
.165(4.2)  
HMBR matured technology with high reliablity  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
ꢀ Low forward voltage drop  
ꢀ High current capability  
ꢀ Low reverse leakage current  
ꢀ High surge current capability  
Application  
.130(3.3)  
.114(2.9)  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS,EPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
ꢀ
ꢀ
ꢀ
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
ꢀ Case: Fully Isolated Molding TO-220F Full Plastic Pak  
ꢀ Epoxy: UL 94V-0 rate flame retardant  
ꢀ Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
ꢀ Polarity: As marked on diode body  
ꢀ Mounting position: Any  
ꢀ Weight: 2.0 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTR"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
MBRF10100CTR MBRF10150CTR MBRF10200CTR  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
150  
105  
150  
10  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
10  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
120  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF= 5 A, TJ=25℃  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
IF= 5 A, TJ=125℃  
VF  
V
IF= 10 A, TJ=25℃  
IF= 10 A, TJ=125℃  
Maximum reverse current @ rated VR  
TJ=25 ℃  
IR  
5
μA  
mA  
TJ=125 ℃  
1
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
TJ  
V/μs  
3.5  
℃
/W  
Operating junction temperature range  
Storage temperature range  
- 55 to +175  
- 55 to +175  
℃
TSTG  
℃
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  
12

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