Datasheet > MBRF10200CT

MBRF10200CT

更新时间： 2024-11-20 12:30:59

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描述
TO-220F Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MBRF10200CT 数据手册

TIGER ELECTRONIC CO.,LTD

TO-220F Plastic-Encapsulate Diodes

MBRF10200CT SCHOTTKY BARRIER RECTIFIER

TO-220F

FEATURES

1. ANODE

2. CATHODE

3. ANODE

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

V_RRM

V_RWM

V_R

Parameter

Value

Unit

Peak repetitive reverse voltage

200

Working peak reverse voltage

DC blocking voltage

RMS reverse voltage

140

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current

8.3ms half sine wave

120

I_FSM

Power dissipation

℃/W

℃

P_D

R_ΘJA

T_j

Thermal resistance from junction to ambient

Junction temperature

125

Storage temperature

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

Reverse voltage

I_R=0.1mA

200

V_R=200V

I_F=5A

μA

Reverse current

Forward voltage

V_F1

0.84

0.95

V_F2*

C_tot

I_F=10A

V_R=4V,f=1MHz

300

Typical total capacitance

*Pulse test

A,Nov,2010

中文翻译

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