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MBRF1035 PDF预览

MBRF1035

更新时间: 2024-02-21 11:26:55
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 251K
描述
Schottky Barrier Rectifiers

MBRF1035 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC, ITO-220AB, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.41其他特性:FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:35 V
表面贴装:NO技术:SCHOTTKY
端子面层:Pure Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MBRF1035 数据手册

 浏览型号MBRF1035的Datasheet PDF文件第2页 
MBRF1030-MBRF10100  
Schottky Barrier Rectifiers  
VOLTAGE RANGE: 30 - 100 V  
CURRENT: 10 A  
ITO-220AC  
Features  
4.5± 0.2  
+0.2  
-0.1  
10.2± 0.2  
3.1  
High surge capacity.  
For use in low voltage, high frequency inverters, free  
11 1wheeling, and polarity protection applications.  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
Guard ring for over voltage protection.  
PIN  
1
2
4.0± 0.3  
1.4± 0.1  
0.6± 0.1  
2.6± 0.2  
Mechanical Data  
Case:JEDEC ITO-220AC,molded plastic body  
0.6± 0.1  
5.0± 0.1  
Polarity: As marked  
Position: Any  
Dimensions in millimeters  
Weight: 0.056 ounces,1.587 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
Ratings at 25  
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
1030 1035 1040 1045 1050 1060 1090 10100  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
35  
25  
35  
40  
28  
40  
45  
32  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forw ard total device  
IF(AV)  
IFSM  
10  
A
A
m rectified current @TC = 133°C  
Peak forw ard surge current 8.3ms single half  
150  
b
sine-w ave superimposed on rated load  
Maximum forw ard  
voltage  
(IF=10A,TC=25  
(IF=10A,TC=125  
(I F=20A,TC=25  
(IF=20A,TC=125  
)
)
0.80  
0.80  
-
)
0.57  
0.84  
0.72  
0.70  
0.95  
0.65  
0.95  
V
VF  
(Note 1)  
)
0.85  
0.75  
Maximum reverse current  
@TC=25  
0.1  
IR  
m A  
at rated DC blocking voltage  
@TC=125  
15  
6.03)  
Maximum thermal resistance (Note2)  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
4.0  
/W  
- 55 ---- + 150  
- 55 ---- + 175  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance from junction to case.  
3.TC=100  
http://www.luguang.cn  
mail:lge@luguang.cn  

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