Datasheet > MBRF1035CT

MBRF1035CT

更新时间： 2024-09-21 12:03:47

品牌	Logo	应用领域
TGS		二极管
页数	文件大小	规格书
2页	396K
描述
TO-220F Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MBRF1035CT 数据手册

TIGER ELECTRONIC CO.,LTD

TO-220F Plastic-Encapsulate Diodes

MBRF1030,35,40,45,50CT

SCHOTTKY BARRIER RECTIFIER

TO-220F

1. ANODE

2. CATHODE

3. ANODE

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Value

Symbol

Parameter

Unit

MBRF10

30CT

35CT

40CT

45CT

50CT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

RMS reverse voltage

24.5

31.5

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current

8.3ms half sine wave

120

I_FSM

Power dissipation

℃/W

℃

P_D

R_ΘJA

T_j

Thermal resistance from junction to ambient

Junction temperature

125

Storage temperature

-55~+150

T_stg

℃

A,Nov,2010

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