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MBRF1035CT PDF预览

MBRF1035CT

更新时间: 2024-11-09 12:03:47
品牌 Logo 应用领域
TGS 二极管
页数 文件大小 规格书
2页 396K
描述
TO-220F Plastic-Encapsulate Diodes

MBRF1035CT 数据手册

 浏览型号MBRF1035CT的Datasheet PDF文件第2页 
TIGER ELECTRONIC CO.,LTD  
TO-220F Plastic-Encapsulate Diodes  
MBRF1030,35,40,45,50CT  
SCHOTTKY BARRIER RECTIFIER  
TO-220F  
1. ANODE  
2. CATHODE  
3. ANODE  
FEATURES  
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss,High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,  
and Polarity Protection Applications  
MAXIMUM RATINGS ( Ta=25unless otherwise noted )  
Value  
Symbol  
Parameter  
Unit  
MBRF10  
MBRF10  
MBRF10  
MBRF10  
MBRF10  
30CT  
35CT  
40CT  
45CT  
50CT  
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
30  
21  
35  
40  
45  
50  
35  
V
RMS reverse voltage  
24.5  
28  
10  
31.5  
V
A
VR(RMS)  
IO  
Average rectified output current  
Non-Repetitive peak forward surge current  
8.3ms half sine wave  
120  
A
IFSM  
Power dissipation  
2
W
/W  
PD  
RΘJA  
Tj  
Thermal resistance from junction to ambient  
Junction temperature  
50  
125  
Storage temperature  
-55~+150  
Tstg  
A,Nov,2010  

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