MBRF1030-MBRF10100
Schottky Barrier Rectifiers
VOLTAGE RANGE: 30 - 100 V
CURRENT: 10 A
ITO-220AC
Features
4.5± 0.2
+0.2
-0.1
10.2± 0.2
3.1
High surge capacity.
For use in low voltage, high frequency inverters, free
11 1wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
PIN
1
2
4.0± 0.3
1.4± 0.1
0.6± 0.1
2.6± 0.2
Mechanical Data
Case:JEDEC ITO-220AC,molded plastic body
0.6± 0.1
5.0± 0.1
Polarity: As marked
Position: Any
Dimensions in millimeters
Weight: 0.056 ounces,1.587 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified.
Ratings at 25
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
1030 1035 1040 1045 1050 1060 1090 10100
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
21
30
35
25
35
40
28
40
45
32
45
50
35
50
60
42
60
90
63
90
100
70
V
V
V
Maximum DC blocking voltage
100
Maximum average forw ard total device
IF(AV)
IFSM
10
A
A
m rectified current @TC = 133°C
Peak forw ard surge current 8.3ms single half
150
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(IF=10A,TC=25
(IF=10A,TC=125
(I F=20A,TC=25
(IF=20A,TC=125
)
)
0.80
0.80
-
)
0.57
0.84
0.72
0.70
0.95
0.65
0.95
V
VF
(Note 1)
)
0.85
0.75
Maximum reverse current
@TC=25
0.1
IR
m A
at rated DC blocking voltage
@TC=125
15
6.03)
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
RθJC
TJ
4.0
/W
- 55 ---- + 150
- 55 ---- + 175
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.TC=100
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