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MBRF10200CT PDF预览

MBRF10200CT

更新时间: 2024-11-20 11:11:27
品牌 Logo 应用领域
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页数 文件大小 规格书
2页 41K
描述
SCHOTTKY BARRIER TYPE DIODE

MBRF10200CT 数据手册

 浏览型号MBRF10200CT的Datasheet PDF文件第2页 
SEMICONDUCTOR  
MBRF10200CT  
SCHOTTKY BARRIER TYPE DIODE  
TECHNICAL DATA  
SWITCHING TYPE POWER SUPPLY APPLICATION.  
CONVERTER & CHOPPER APPLICATION.  
C
A
FEATURES  
Average Output Rectified Current  
: IO=10A.  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
Repetitive Peak Reverse Voltage  
: VRRM=200V.  
_
2.54 0.2  
+
_
0.8 0.1  
+
_
+
3.18  
0.1  
Fast Reverse Recovery Time : trr=35ns.  
_
3.3 0.1  
+
F
_
12.57 0.2  
+
G
H
J
L
M
N
_
0.5 0.1  
+
R
_
13.0 0.5  
+
_
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
M
N
O
Q
R
N
H
_
2.54 0.2  
+
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
_
6.68 0.2  
+
SYMBOL  
VRRM  
RATING  
200  
UNIT  
V
_
4.7  
+
_
0.2  
1. ANODE  
2.76 0.2  
+
1
2
3
Repetitive Peak Reverse Voltage  
Average Output Rectified  
2. CATHODE  
3. ANODE  
IO  
10  
A
A
Current (Tc=118 ) (Note)  
Peak One Cycle Surge Forward  
Current (Non-Repetitive 60Hz)  
TO-220IS (1)  
IFSM  
100  
Tj  
Junction Temperature  
-40 150  
-55 150  
Tstg  
Storage Temperature Range  
Note : average forward current of centertap full wave connection.  
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VFM  
TEST CONDITION  
MIN.  
TYP.  
-
MAX.  
0.95  
UNIT  
IFM=5A  
Peak Forward Voltage  
(Note)  
-
-
V
Repetitive Peak  
Reverse Current  
IRRM  
VRRM=Rated  
-
150  
(Note)  
(Note)  
trr  
Reverse Recovery Time  
Thermal Resistance  
-
-
-
-
35  
3
ns  
IF=1.0A, di/dt=-30A/  
Juction to Case  
Rth(j-c)  
(Note)  
/W  
Note : A value of one cell  
2008. 5. 13  
Revision No : 1  
1/2  

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