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MBRF10200CT PDF预览

MBRF10200CT

更新时间: 2024-01-02 23:09:07
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TAK_CHEONG 整流二极管肖特基二极管瞄准线高压功效局域网
页数 文件大小 规格书
4页 144K
描述
10A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier

MBRF10200CT 技术参数

生命周期:Active包装说明:GREEN, PLASTIC, ITO-220AB, 3 PIN
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.64
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
技术:SCHOTTKY端子面层:PURE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBRF10200CT 数据手册

 浏览型号MBRF10200CT的Datasheet PDF文件第2页浏览型号MBRF10200CT的Datasheet PDF文件第3页浏览型号MBRF10200CT的Datasheet PDF文件第4页 
TAK CHEONG®  
SEMICONDUCTOR  
10A SCHOTTKY BARRIER DIODE  
Full Pack High Voltage Schottky  
Rectifier  
1
Specification Features:  
2
3
TO-220FP  
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High Voltage Wide Range Selection, 100V, 150V & 200V  
High Switching Speed Device  
Low Forward Voltage Drop  
DEVICE MARKING DIAGRAM  
Low Power Loss and High Efficiency  
Guard Ring for Over-voltage Protection  
High Surge Capability  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
Line 2 = MBRF  
Line 3 = 10xxxCT  
Line 4 = Polarity  
L xxyy  
Line 2  
Line 3  
Line 4  
RoHS Compliant  
Matte Tin(Sn) Lead Finish  
Terminal Leads Surface is Corrosion Resistant  
and can withstand to 260°C Wave Soldering or  
per MIL-STD-750, Method 2026.  
POLARITY CONFIGURATION  
1. Anode  
3. Anode  
2. Cathode  
MAXIMUM RATINGS (Per Leg, unless otherwise specified )  
Symbol  
Parameter  
MBRF10100CT  
MBRF10150CT  
MBRF10200CT  
Units  
VRRM  
VRWM  
VR  
Maximum Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
Maximum DC Reverse Voltage  
Average Rectified Forward Current  
Per Leg  
100  
150  
200  
V
IF(AV)  
5
10  
A
A
Per Package  
Non-repetitive Peak Forward Surge Current  
8.3mS Single Phase @ Rated Load  
IFSM  
80  
TSTG  
TJ  
Storage Temperature Range  
-65 to +150  
+150  
°C  
°C  
Operating Junction Temperature  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
THERMAL CHARACTERISTIC  
Symbol  
Parameter  
Value  
Units  
Maximum Thermal Resistance, Junction-to-Case  
1.5  
°C/W  
°C/W  
RθJC  
RθJA  
Maximum Thermal Resistance, Junction-to-Ambient (per leg)  
62.5  
ELECTRICAL CHARACTERISTICS (Per Leg)  
TA = 25°C unless otherwise noted  
MBRF10100CT MBRF10150CT  
MBRF10200CT  
Test Condition  
Symbol  
Parameter  
Units  
(Note 1)  
Min  
---  
Max  
100  
Min  
---  
Max  
100  
Min  
---  
Max  
100  
IR  
Reverse Current  
Forward Voltage  
@ rated VR  
IF = 5A  
μA  
0.85  
0.95  
0.92  
1.00  
1.00  
1.25  
VF  
---  
---  
---  
V
IF = 10A  
Note/s:  
1. Tested under pulse condition of 300μS.  
Number: DB-150  
March 2010, Revision D  
Page 1  

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