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MBRF10200CT PDF预览

MBRF10200CT

更新时间: 2024-11-21 15:18:07
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
3页 634K
描述
Littelfuse MBRF10200CT系列肖特基位障二极管整流器的设计旨在提供具有高温、低泄漏电流、低正向电压降的产品,切合商业用途的一般要求。 功能与特色: 应用:

MBRF10200CT 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:unknown
风险等级:1.59Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.98 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:128 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
最大反向电流:1000 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRF10200CT 数据手册

 浏览型号MBRF10200CT的Datasheet PDF文件第2页浏览型号MBRF10200CT的Datasheet PDF文件第3页 
Schottky Barrier Rectifier  
MBRF10200CT, 2x 5A, 200V, ITO-220AB, Common Cathode  
Pb  
RoHS  
MBRF10200CT  
Description  
Littelfuse MBR series Schottky Barrier Rectifier is  
designed to meet the general requirements of commercial  
applications by providing high temperature, low leakage  
and low VF products.  
It is suitable for high frequency switching mode power  
supply, free-wheeling diodes and polarity protection  
diodes.  
Features  
• High junction  
• High frequency operation  
temperature capability  
• Common cathode  
configuration in  
electrically isolated ITO-  
220AB package  
Pin out  
• Guard ring for enhanced  
ruggedness and long  
term reliability  
• Low forward voltage drop  
Applications  
1
3
2
Common  
Cathode  
• Switching mode power  
supply  
• DC/DC converters  
Anode  
Anode  
• Polarity protection diodes  
• Free-wheeling diodes  
Maximum Ratings  
Parameters  
Symbol  
Test Conditions  
Max  
200  
Unit  
Peak Inverse Voltage  
VRWM  
-
V
50% duty cycle @TC =105°C,  
rectangular wave form  
5 (per leg)  
10 (total device)  
Average Forward Current  
IF(AV)  
IFSM  
A
A
Peak One Cycle Non-Repetitive Surge  
Current (per leg)  
128  
8.3 ms, half Sine pulse  
Electrical Characteristics  
Parameters  
Symbol  
VF1  
Test Conditions  
@ 5A, Pulse, TJ = 25 °C  
Max  
0.98  
0.78  
1.0  
Unit  
Forward Voltage Drop (per leg) *  
V
VF2  
@ 5A, Pulse, TJ = 125 °C  
Reverse Current at DC condition (per leg)  
Reverse Current (per leg) *  
IR1  
@VR = rated VR TJ = 25 °C  
mA  
IR2  
@VR = rated VR TJ = 125 °C  
7. 0  
Junction Capacitance (per leg)  
Typical Series Inductance (per leg)  
Voltage Rate of Change  
CT  
@VR = 5V, TC = 25 °C fSIG = 1MHz  
Measured lead to lead 5 mm from package body  
150  
pF  
nH  
LS  
8.0  
dv/dt  
10,000  
V/μs  
Clip mounting, the epoxy body away from the  
heatsink edge by more than 0.110” along the  
lead direction.  
4500  
RSM Isolation Voltage  
(t = 1.0 second, R. H. < =30%,  
TA = 25 °C)  
VISO  
Clip mounting, the epoxy body is inside the  
heatsink.  
V
3500  
1500  
Screw mounting, the epoxy body is inside the  
heatsink.  
* Pulse Width < 300μs, Duty Cycle <2%  
©2015 Littelfuse, Inc  
Specifications are subject to change without notice.  
Revised:11/09/15  

MBRF10200CT 替代型号

型号 品牌 替代类型 描述 数据表
MBRFH10200CT GOOD-ARK

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, ITO-220

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