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MBRB25H60CTHE3_B/P PDF预览

MBRB25H60CTHE3_B/P

更新时间： 2024-09-09 04:26:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 100K
描述
Rectifier Diode,

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MBRB25H60CTHE3_B/P 数据手册

 浏览型号MBRB25H60CTHE3_B/P的Datasheet PDF文件第2页浏览型号MBRB25H60CTHE3_B/P的Datasheet PDF文件第3页浏览型号MBRB25H60CTHE3_B/P的Datasheet PDF文件第4页浏览型号MBRB25H60CTHE3_B/P的Datasheet PDF文件第5页 
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
D2PAK (TO-263AB)  
• Guardring for overvoltage protection  
K
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
2
• High forward surge capability  
• High frequency operation  
1
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
MBRB25HxxCT  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
PIN 2  
K
HEATSINK  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
Available  
MECHANICAL DATA  
Case: D2PAK (TO-263AB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
VRRM  
35 V, 45 V, 60 V  
150 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IFSM  
HE3 suffix meets JESD 201 class 2 whisker test  
VF  
IR  
0.54 V, 0.60 V  
100 μA  
Polarity: as marked  
TJ max.  
175 °C  
D2PAK (TO-263AB)  
Package  
Circuit configuration  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBRB25H35CT MBRB25H45CT MBRB25H60CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
30  
15  
60  
60  
60  
V
total device  
per diode  
Max. average forward rectified current (fig. 1)  
IF(AV)  
A
Non-repetitive avalanche energy per diode at 25 °C,  
EAS  
80  
mJ  
A
IAS = 4 A, L = 10 mH  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse surge current per diode at tp = 2.0 μs,  
1 kHz  
IRRM  
ERSM  
VC  
1.0  
25  
1.0  
25  
25  
0.5  
20  
A
Peak non-repetitive reverse energy (8/20 μs waveform)  
mJ  
kV  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 k  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 19-Sep-2018  
Document Number: 88789  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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