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MBRB3030CT PDF预览

MBRB3030CT

更新时间: 2024-01-06 02:35:02
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关瞄准线功效
页数 文件大小 规格书
6页 60K
描述
SWITCHMODE Power Rectifier

MBRB3030CT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:not_compliant
风险等级:5.64应用:EFFICIENCY
最小击穿电压:30 V外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:250 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:30 V最大反向电流:1000 µA
反向测试电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLEBase Number Matches:1

MBRB3030CT 数据手册

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MBRB3030CT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These state−of−the−art devices use the Schottky Barrier principle  
with a proprietary barrier metal.  
Features  
http://onsemi.com  
Guardring for Stress Protection  
Maximum Die Size  
175°C Operating Junction Temperature  
Short Heat Sink Tab Manufactured − Not Sheared  
Pb−Free Packages are Available  
SCHOTTKY BARRIER  
RECTIFIER  
30 AMPERES, 30 VOLTS  
Mechanical Characteristics:  
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
Weight: 1.7 Grams (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
1
4
3
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
4
Device Meets MSL1 Requirements  
ESD Ratings: Machine Model, C (>400 V)  
1
Human Body Model, 3B (>8000 V)  
3
MAXIMUM RATINGS  
2
D PAK  
Rating  
Symbol  
Value  
Unit  
CASE 418B  
STYLE 3  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
30  
V
RRM  
RWM  
R
Average Rectified Forward Current  
I
A
MARKING DIAGRAM  
F(AV)  
30  
15  
(At Rated V , T = 134°C)  
Per Device  
Per Leg  
R
C
Peak Repetitive Forward Current  
I
30  
200  
2.0  
A
A
A
FRM  
(At Rated V , Square Wave,  
AY WW  
R
20 kHz, T = +137°C) Per Leg  
C
B3030CTG  
AKA  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions,  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
RRM  
Peak Repetitive Reverse Surge Current  
I
(2.0 ms, 1.0 kHz)  
Storage Temperature Range  
T
−55 to +175  
−55 to +175  
10,000  
°C  
°C  
stg  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
mJ  
R
B3030CT = Device Code  
G
AKA  
Reverse Energy  
(Unclamped Inductive Surge)  
W
100  
= Pb−Free Package  
= Diode Polarity  
(Inductance = 3 mH, T = 25°C)  
C
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. The heat generated must be less than the thermal conductivity from  
Preferred devices are recommended choices for future use  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
and best overall value.  
D
J
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 6  
MBRB3030CT/D  
 

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