MBRB3030CT
Preferred Device
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
http://onsemi.com
• Guardring for Stress Protection
• Maximum Die Size
• 175°C Operating Junction Temperature
• Short Heat Sink Tab Manufactured − Not Sheared
• Pb−Free Packages are Available
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 30 VOLTS
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
1
4
3
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
4
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
1
Human Body Model, 3B (>8000 V)
3
MAXIMUM RATINGS
2
D PAK
Rating
Symbol
Value
Unit
CASE 418B
STYLE 3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
30
V
RRM
RWM
R
Average Rectified Forward Current
I
A
MARKING DIAGRAM
F(AV)
30
15
(At Rated V , T = 134°C)
Per Device
Per Leg
R
C
Peak Repetitive Forward Current
I
30
200
2.0
A
A
A
FRM
(At Rated V , Square Wave,
AY WW
R
20 kHz, T = +137°C) Per Leg
C
B3030CTG
AKA
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
I
FSM
RRM
Peak Repetitive Reverse Surge Current
I
(2.0 ms, 1.0 kHz)
Storage Temperature Range
T
−55 to +175
−55 to +175
10,000
°C
°C
stg
A
Y
WW
= Assembly Location
= Year
= Work Week
Operating Junction Temperature (Note 1)
T
J
Voltage Rate of Change (Rated V )
dv/dt
V/ms
mJ
R
B3030CT = Device Code
G
AKA
Reverse Energy
(Unclamped Inductive Surge)
W
100
= Pb−Free Package
= Diode Polarity
(Inductance = 3 mH, T = 25°C)
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1. The heat generated must be less than the thermal conductivity from
Preferred devices are recommended choices for future use
Junction−to−Ambient: dP /dT < 1/R .
q
JA
and best overall value.
D
J
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 6
MBRB3030CT/D