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MBRB3030CTT4 PDF预览

MBRB3030CTT4

更新时间： 2024-01-01 11:04:14
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
6页 60K
描述
SWITCHMODE Power Rectifier

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中文翻译

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MBRB3030CTT4 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-263包装说明：LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3
针数：3Reach Compliance Code：unknown
风险等级：5.64Is Samacsys：N
应用：POWER外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
最大非重复峰值正向电流：200 A元件数量：2
相数：1端子数量：2
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：COMMERCIAL
最大重复峰值反向电压：30 V表面贴装：YES
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBRB3030CTT4 数据手册

 浏览型号MBRB3030CTT4的Datasheet PDF文件第2页浏览型号MBRB3030CTT4的Datasheet PDF文件第3页浏览型号MBRB3030CTT4的Datasheet PDF文件第4页浏览型号MBRB3030CTT4的Datasheet PDF文件第5页浏览型号MBRB3030CTT4的Datasheet PDF文件第6页 
MBRB3030CT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These state−of−the−art devices use the Schottky Barrier principle  
with a proprietary barrier metal.  
Features  
http://onsemi.com  
• Guardring for Stress Protection  
• Maximum Die Size  
• 175°C Operating Junction Temperature  
• Short Heat Sink Tab Manufactured − Not Sheared  
• Pb−Free Packages are Available  
SCHOTTKY BARRIER  
RECTIFIER  
30 AMPERES, 30 VOLTS  
Mechanical Characteristics:  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
1
4
3
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
4
• Device Meets MSL1 Requirements  
• ESD Ratings: Machine Model, C (>400 V)  
1
Human Body Model, 3B (>8000 V)  
3
MAXIMUM RATINGS  
2
D PAK  
Rating  
Symbol  
Value  
Unit  
CASE 418B  
STYLE 3  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
30  
V
RRM  
RWM  
R
Average Rectified Forward Current  
I
A
MARKING DIAGRAM  
F(AV)  
30  
15  
(At Rated V , T = 134°C)  
Per Device  
Per Leg  
R
C
Peak Repetitive Forward Current  
I
30  
200  
2.0  
A
A
A
FRM  
(At Rated V , Square Wave,  
AY WW  
R
20 kHz, T = +137°C) Per Leg  
C
B3030CTG  
AKA  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions,  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
RRM  
Peak Repetitive Reverse Surge Current  
I
(2.0 ms, 1.0 kHz)  
Storage Temperature Range  
T
−55 to +175  
−55 to +175  
10,000  
°C  
°C  
stg  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
mJ  
R
B3030CT = Device Code  
G
AKA  
Reverse Energy  
(Unclamped Inductive Surge)  
W
100  
= Pb−Free Package  
= Diode Polarity  
(Inductance = 3 mH, T = 25°C)  
C
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. The heat generated must be less than the thermal conductivity from  
Preferred devices are recommended choices for future use  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
and best overall value.  
D
J
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 6  
MBRB3030CT/D  
 
123456

中文翻译

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MBRB3030CTT4 替代型号

型号 品牌 替代类型 描述 数据表
MBRB3030CTT4G ONSEMI

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 SWITCHMODE Power Rectifier

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