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MBRB3035CT-1TRRP PDF预览

MBRB3035CT-1TRRP

更新时间： 2024-02-13 23:18:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 128K
描述
Schottky Rectifier, 2 x 15 A

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MBRB3035CT-1TRRP 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-262AA
包装说明：LEAD FREE, PLASTIC, MODIFIED TO-262, 3 PIN针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.66
Is Samacsys：N其他特性：HIGH RELIABILITY, FREE WHEELING DIODE
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.6 V
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3最大非重复峰值正向电流：200 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT APPLICABLE
认证状态：Not Qualified最大重复峰值反向电压：35 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

MBRB3035CT-1TRRP 数据手册

 浏览型号MBRB3035CT-1TRRP的Datasheet PDF文件第2页浏览型号MBRB3035CT-1TRRP的Datasheet PDF文件第3页浏览型号MBRB3035CT-1TRRP的Datasheet PDF文件第4页浏览型号MBRB3035CT-1TRRP的Datasheet PDF文件第5页浏览型号MBRB3035CT-1TRRP的Datasheet PDF文件第6页 
VS-MBRB30..CTPbF, VS-MBR30..CT-1PbF Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 15 A  
VS-MBR30..CT-1PbF  
FEATURES  
• 150 °C TJ operation  
VS-MBRB30..CTPbF  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
2
1
Anode  
1
3
3
Common  
cathode  
D2PAK  
Common  
cathode  
Anode  
Anode  
Anode  
TO-262  
DESCRIPTION  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 15 A  
VR  
35 V/45 V  
IRM  
100 mA at 125 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 123 °C (per leg)  
VALUES  
30  
UNITS  
A
30  
VRRM  
IFSM  
35/45  
1020  
V
A
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
VF  
0.6  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
VS-MBRB3035CTPbF  
VS-MBR3035CT-1PbF  
VS-MBRB3045CTPbF  
VS-MBR3045CT-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 123 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 123 °C  
VALUES  
UNITS  
per leg  
15  
30  
30  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
A
5 μs sine or 3 μs  
rect. pulse  
Following any rated load condition  
and with rated VRRM applied  
1020  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
200  
10  
2
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Document Number: 94310  
Revision: 16-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1
123456

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