5秒后页面跳转
捷配首页

Datasheet > 二极管 > 整流二极管> MBRB3030CTT4G
MBRB3030CTT4G PDF预览

MBRB3030CTT4G

更新时间： 2024-11-11 11:11:31
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
6页 60K
描述
SWITCHMODE Power Rectifier

阅读下载

中文翻译

获取价格

MBRB3030CTT4G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-263包装说明：D2PAK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：1.01
Is Samacsys：N应用：POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.47 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：200 A元件数量：2
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
Base Number Matches：1

MBRB3030CTT4G 数据手册

 浏览型号MBRB3030CTT4G的Datasheet PDF文件第2页浏览型号MBRB3030CTT4G的Datasheet PDF文件第3页浏览型号MBRB3030CTT4G的Datasheet PDF文件第4页浏览型号MBRB3030CTT4G的Datasheet PDF文件第5页浏览型号MBRB3030CTT4G的Datasheet PDF文件第6页 
MBRB3030CT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These state−of−the−art devices use the Schottky Barrier principle  
with a proprietary barrier metal.  
Features  
http://onsemi.com  
• Guardring for Stress Protection  
• Maximum Die Size  
• 175°C Operating Junction Temperature  
• Short Heat Sink Tab Manufactured − Not Sheared  
• Pb−Free Packages are Available  
SCHOTTKY BARRIER  
RECTIFIER  
30 AMPERES, 30 VOLTS  
Mechanical Characteristics:  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
1
4
3
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
4
• Device Meets MSL1 Requirements  
• ESD Ratings: Machine Model, C (>400 V)  
1
Human Body Model, 3B (>8000 V)  
3
MAXIMUM RATINGS  
2
D PAK  
Rating  
Symbol  
Value  
Unit  
CASE 418B  
STYLE 3  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
30  
V
RRM  
RWM  
R
Average Rectified Forward Current  
I
A
MARKING DIAGRAM  
F(AV)  
30  
15  
(At Rated V , T = 134°C)  
Per Device  
Per Leg  
R
C
Peak Repetitive Forward Current  
I
30  
200  
2.0  
A
A
A
FRM  
(At Rated V , Square Wave,  
AY WW  
R
20 kHz, T = +137°C) Per Leg  
C
B3030CTG  
AKA  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions,  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
RRM  
Peak Repetitive Reverse Surge Current  
I
(2.0 ms, 1.0 kHz)  
Storage Temperature Range  
T
−55 to +175  
−55 to +175  
10,000  
°C  
°C  
stg  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
mJ  
R
B3030CT = Device Code  
G
AKA  
Reverse Energy  
(Unclamped Inductive Surge)  
W
100  
= Pb−Free Package  
= Diode Polarity  
(Inductance = 3 mH, T = 25°C)  
C
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. The heat generated must be less than the thermal conductivity from  
Preferred devices are recommended choices for future use  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
and best overall value.  
D
J
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 6  
MBRB3030CT/D  
 
123456

中文翻译

下载PDF

MBRB3030CTT4G 替代型号

型号 品牌 替代类型 描述 数据表
MBRB3030CTT4 ONSEMI

类似代替

 SWITCHMODE Power Rectifier

与MBRB3030CTT4G相关器件

型号 品牌 获取价格 描述 数据表
MBRB3030CT-TP MCC

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 30V V(RRM), Silicon, PLASTIC, D2PAK-3
MBRB3035CT SENSITRON

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3
MBRB3035CT KERSEMI

获取价格

 		Plastic package has Underwriters Laboratory Flammability Classification 94V-0
MBRB3035CT SSC

获取价格

 		Dual Schottky Barrier Rectifiers
MBRB3035CT VISHAY

获取价格

 		Dual Schottky Rectifiers
MBRB3035CT BL Galaxy Electrical

获取价格

 		30A,35V,Schottky Barrier Rectifiers
MBRB3035CT/81 VISHAY

获取价格

 		Rectifier Diode, Schottky, 15A, 35V V(RRM),
MBRB3035CT-1P VISHAY

获取价格

 		Schottky Rectifier, 2 x 15 A
MBRB3035CT-1PBF VISHAY

获取价格

 		Schottky Rectifier, 2 x 15 A
MBRB3035CT-1TRLP VISHAY

获取价格

 		Schottky Rectifier, 2 x 15 A

与MBRB3030CTT4G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证