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MBRB25H45CTHE3_B/P

更新时间： 2024-11-11 20:11:23
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 100K
描述
Rectifier Diode,

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MBRB25H45CTHE3_B/P 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G2Reach Compliance Code：unknown
风险等级：5.71其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.74 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：245参考标准：AEC-Q101
最大重复峰值反向电压：45 V最大反向电流：100 µA
表面贴装：YES技术：SCHOTTKY
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
Base Number Matches：1

MBRB25H45CTHE3_B/P 数据手册

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MBRB25H35CT, MBRB25H45CT, MBRB25H60CT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
D2PAK (TO-263AB)  
• Guardring for overvoltage protection  
K
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
2
• High forward surge capability  
• High frequency operation  
1
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
MBRB25HxxCT  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
PIN 2  
K
HEATSINK  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
Available  
MECHANICAL DATA  
Case: D2PAK (TO-263AB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
VRRM  
35 V, 45 V, 60 V  
150 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IFSM  
HE3 suffix meets JESD 201 class 2 whisker test  
VF  
IR  
0.54 V, 0.60 V  
100 μA  
Polarity: as marked  
TJ max.  
175 °C  
D2PAK (TO-263AB)  
Package  
Circuit configuration  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBRB25H35CT MBRB25H45CT MBRB25H60CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
30  
15  
60  
60  
60  
V
total device  
per diode  
Max. average forward rectified current (fig. 1)  
IF(AV)  
A
Non-repetitive avalanche energy per diode at 25 °C,  
EAS  
80  
mJ  
A
IAS = 4 A, L = 10 mH  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse surge current per diode at tp = 2.0 μs,  
1 kHz  
IRRM  
ERSM  
VC  
1.0  
25  
1.0  
25  
25  
0.5  
20  
A
Peak non-repetitive reverse energy (8/20 μs waveform)  
mJ  
kV  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 k  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 19-Sep-2018  
Document Number: 88789  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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