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MBRB25H50CT-HE3/45 PDF预览

MBRB25H50CT-HE3/45

更新时间： 2024-02-16 17:39:26
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 133K
描述
DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode

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MBRB25H50CT-HE3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：D2PAK
包装说明：ROHS COMPLIANT PACKAGE-3针数：3
Reach Compliance Code：unknown风险等级：5.75
Base Number Matches：1

MBRB25H50CT-HE3/45 数据手册

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New Product  
MBR(F,B)25H35CT thru MBR(F,B)25H60CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
3
3
2
2
1
• High frequency operation  
1
MBRF25HxxCT  
MBR25HxxCT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder dip 260 °C, 40  
ITO-220AB package)  
s
(for TO-220AB and  
TO-263AB  
K
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB25HxxCT  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
VRRM  
IFSM  
VF  
35 V to 60 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix for consumer grade, meets JESD 201 class 1A  
whisker test, HE3 suffix for high reliability grade (AEC-Q101  
qualified), meets JESD 201 class 2 whisker test  
0.54 V, 0.60 V  
100 μA  
IR  
Polarity: As marked  
TJ max.  
175 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
total device  
per diode  
30  
15  
Max. average forward  
rectified current (fig. 1)  
IF(AV)  
A
Non-repetitive avalanche energy per diode  
at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
IFSM  
IRRM  
ERSM  
80  
mJ  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
150  
Peak repetitive reverse surge current per diode  
at tp = 2.0 μs, 1 kHz  
1.0  
25  
0.5  
20  
A
Peak non-repetitive reverse energy  
(8/20 μs waveform)  
mJ  
Document Number: 88789  
Revision: 18-Mar-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
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