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MBRB25H45CTHE3-A PDF预览

MBRB25H45CTHE3-A

更新时间: 2024-11-12 01:17:15
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威世 - VISHAY /
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5页 153K
描述
Dual Common Cathode Schottky Rectifier

MBRB25H45CTHE3-A 数据手册

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MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
3
• High frequency operation  
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
1
MBRF25HxxCT  
MBR25HxxCT  
PIN 1  
PIN 2  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3_A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 3  
TO-263AB  
K
2
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
1
MBRB25HxxCT  
PIN 1  
K
MECHANICAL DATA  
PIN 2  
HEATSINK  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
VRRM  
35 V to 60 V  
150 A  
IFSM  
VF  
0.54 V, 0.60 V  
100 μA  
IR  
TJ max.  
Package  
Diode variations  
175 °C  
Polarity: as marked  
Mounting Torque: 10 in-lbs maximum  
TO-220AB, ITO-220AB, TO-263AB  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR25H35CT MBR25H45CT MBR25H60CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
30  
15  
60  
60  
60  
V
A
total device  
per diode  
Max. average forward rectified current (fig. 1)  
IF(AV)  
Non-repetitive avalanche energy per diode at 25 °C,  
EAS  
80  
mJ  
A
IAS = 4 A, L = 10 mH  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz  
Peak non-repetitive reverse energy (8/20 μs waveform)  
IRRM  
1.0  
25  
0.5  
20  
A
ERSM  
mJ  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 k  
VC  
25  
kV  
Voltage rate of change (rated VR)  
dV/dt  
TJ, TSTG  
VAC  
10 000  
-65 to +175  
1500  
V/μs  
°C  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
V
Revision: 21-Nov-16  
Document Number: 88789  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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