MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
3
• High frequency operation
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
1
MBRF25HxxCT
MBR25HxxCT
PIN 1
PIN 2
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 3
PIN 2
CASE
PIN 3
TO-263AB
K
2
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
1
MBRB25HxxCT
PIN 1
K
MECHANICAL DATA
PIN 2
HEATSINK
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
150 A
IFSM
VF
0.54 V, 0.60 V
100 μA
IR
TJ max.
Package
Diode variations
175 °C
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
TO-220AB, ITO-220AB, TO-263AB
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR25H35CT MBR25H45CT MBR25H60CT UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
30
15
60
60
60
V
A
total device
per diode
Max. average forward rectified current (fig. 1)
IF(AV)
Non-repetitive avalanche energy per diode at 25 °C,
EAS
80
mJ
A
IAS = 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
IRRM
1.0
25
0.5
20
A
ERSM
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
TJ, TSTG
VAC
10 000
-65 to +175
1500
V/μs
°C
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
V
Revision: 21-Nov-16
Document Number: 88789
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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