Datasheet > MBRB25H45CTHE3-A

MBRB25H45CTHE3-A

更新时间： 2022-02-26 12:57:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	153K
描述
Dual Common Cathode Schottky Rectifier

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MBRB25H45CTHE3-A 数据手册

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT

www.vishay.com

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES (T_C= 25 °C unless otherwise noted)

100

MBR, MBRB

T_J= 150 °C

_J= 125 °C

MBRF

0.1

0.01

MBR25H35CT, MBR25H45CT

MBR25H60CT

0.001

0.0001

T_J= 25 °C

100

125

150

175

100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Derating Curve (Total)

Fig. 4 - Typical Reverse Characteristics Per Diode

150

125

100

10 000

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

1000

MBR25H35CT, MBR25H45CT

MBR25H60CT

100

0.1

100

Number of Cycles at 60 Hz

Reverse Voltage (V)

Fig. 2 - Maximum Non-Repetitive Peak Forward

Surge Current Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

T_J= 150 °C

T_J= 25 °C

T_J= 125 °C

0.1

0.01

MBR25H35CT, MBR25H45CT

MBR25H60CT

0.1

0.01

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

t - Pulse Duration (s)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Revision: 21-Nov-16

Document Number: 88789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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