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MBRB25H35CT-E3/81 PDF预览

MBRB25H35CT-E3/81

更新时间： 2024-10-02 14:22:11
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 149K
描述
DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode

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MBRB25H35CT-E3/81 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.68
其他特性：FREEWHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.54 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：35 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBRB25H35CT-E3/81 数据手册

 浏览型号MBRB25H35CT-E3/81的Datasheet PDF文件第2页浏览型号MBRB25H35CT-E3/81的Datasheet PDF文件第3页浏览型号MBRB25H35CT-E3/81的Datasheet PDF文件第4页浏览型号MBRB25H35CT-E3/81的Datasheet PDF文件第5页 
MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
3
• High forward surge capability  
• High frequency operation  
3
2
2
1
1
MBRF25HxxCT  
MBR25HxxCT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 3  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
MBRB25HxxCT  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB, ITO-220AB, TO-263AB  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 15 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
35 V to 60 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
0.54 V, 0.60 V  
100 μA  
IR  
TJ max.  
Package  
175 °C  
meets JESD 201 class 2 whisker test  
TO-220AB, ITO-220AB, TO-263AB  
Common cathode  
Polarity: As marked  
Diode variations  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
A
total device  
per diode  
30  
15  
Max. average forward  
rectified current (fig. 1)  
IF(AV)  
Non-repetitive avalanche energy per diode  
EAS  
IFSM  
IRRM  
ERSM  
80  
mJ  
A
at 25 °C, IAS = 4 A, L = 10 mH  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
150  
Peak repetitive reverse surge current per diode  
at tp = 2.0 μs, 1 kHz  
1.0  
25  
0.5  
20  
A
Peak non-repetitive reverse energy  
(8/20 μs waveform)  
mJ  
Revision: 12-Jun-13  
Document Number: 88789  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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