New Product
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
3
3
2
2
1
• High frequency operation
1
MBRF25HxxCT
MBR25HxxCT
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
PIN 1
PIN 2
PIN 1
PIN 2
CASE
PIN 3
PIN 3
• Solder dip 260 °C, 40
ITO-220AB package)
s
(for TO-220AB and
TO-263AB
K
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
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TYPICAL APPLICATIONS
MBRB25HxxCT
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
IFSM
VF
35 V to 60 V
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
0.54 V, 0.60 V
100 μA
IR
Polarity: As marked
TJ max.
175 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
V
V
total device
per diode
30
15
Max. average forward
rectified current (fig. 1)
IF(AV)
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
IFSM
IRRM
ERSM
80
mJ
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
150
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
1.0
25
0.5
20
A
Peak non-repetitive reverse energy
(8/20 μs waveform)
mJ
Document Number: 88789
Revision: 18-Mar-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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