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MBRB1045

更新时间： 2024-01-12 15:55:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
6页 102K
描述
SWITCHMODE Schottky Power Rectifier

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中文翻译

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MBRB1045 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-263
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.55
其他特性：FREE WHEELING DIODE, HIGH RELIABILITY应用：GENERAL PURPOSE
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.57 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：1060 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：45 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30

MBRB1045 数据手册

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MBRB1045, MBRD1045  
Preferred Device  
SWITCHMODEt  
Schottky Power Rectifier  
Surface Mount Power Package  
This series of Power Rectifiers employs the Schottky Barrier  
principle in a large metal−to−silicon power diode. State−of−the−art  
geometry features epitaxial construction with oxide passivation and  
metal overlay contact. Ideally suited for use in low voltage, high  
frequency switching power supplies, free wheeling diodes, and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
10 AMPERES, 45 VOLTS  
Features  
• Guardring for Stress Protection  
• Low Forward Voltage  
• 175°C Operating Junction Temperature  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Short Heat Sink Tab Manufactured − Not Sheared!  
• Pb−Free Packages are Available  
1
4
3
MARKING DIAGRAM  
4
AY WW  
Mechanical Characteristics:  
MBRB1045G  
AKA  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
1
2
3
• Weight: 1.7 grams for D PAK (approximately)  
2
0.4 grams for DPAK (approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
D PAK  
CASE 418B  
PLASTIC  
A
Y
= Assembly Location  
= Year  
= Work Week  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
WW  
• Device Meets MSL1 Requirements  
• ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MBRB1045 = Device Code  
G
= Pb−Free Package  
= Diode Polarity  
AKA  
MAXIMUM RATINGS  
MARKING DIAGRAM  
4
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
45  
V
RRM  
RWM  
YWW  
B10  
45G  
2
1
3
R
DPAK  
CASE 369C  
Average Rectified Forward Current  
I
10  
20  
A
A
F(AV)  
(Rated V ) T = 135°C  
R
C
Y
= Year  
= Work Week  
Peak Repetitive Forward Current  
I
FRM  
(Rated V , Square Wave, 20 kHz)  
WW  
B1045  
G
R
T
= 135°C  
C
= Device Code  
= Pb−Free Package  
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
150 (MBRB)  
70 (MBRD)  
A
FSM  
Operating Junction and Storage  
Temperature Range (Note 1)  
T , T  
−65 to +175  
°C  
J
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Voltage Rate of Change (Rated V )  
dv/dt  
10000  
V/ms  
R
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 − Rev. 7  
MBRB1045/D  
 
123456

中文翻译

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MBRB1045 替代型号

型号 品牌 替代类型 描述 数据表
MBRB1045G ONSEMI

完全替代

 SWITCHMODE Schottky Power Rectifier
MBRB1045T4 ONSEMI

完全替代

 SWITCHMODE Schottky Power Rectifier
MBRB1045T4G ONSEMI

完全替代

 SWITCHMODE Schottky Power Rectifier

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