MBRB1045, MBRD1045
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• Pb−Free Packages are Available
1
4
3
MARKING DIAGRAM
4
AY WW
Mechanical Characteristics:
MBRB1045G
AKA
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
1
2
3
• Weight: 1.7 grams for D PAK (approximately)
2
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
D PAK
CASE 418B
PLASTIC
A
Y
= Assembly Location
= Year
= Work Week
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
WW
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MBRB1045 = Device Code
G
= Pb−Free Package
= Diode Polarity
AKA
MAXIMUM RATINGS
MARKING DIAGRAM
4
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
45
V
RRM
RWM
YWW
B10
45G
2
1
3
R
DPAK
CASE 369C
Average Rectified Forward Current
I
10
20
A
A
F(AV)
(Rated V ) T = 135°C
R
C
Y
= Year
= Work Week
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz)
WW
B1045
G
R
T
= 135°C
C
= Device Code
= Pb−Free Package
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
150 (MBRB)
70 (MBRD)
A
FSM
Operating Junction and Storage
Temperature Range (Note 1)
T , T
−65 to +175
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Voltage Rate of Change (Rated V )
dv/dt
10000
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Preferred devices are recommended choices for future use
and best overall value.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 7
MBRB1045/D