Datasheet > MBRB1045CT

MBRB1045CT

更新时间： 2024-11-03 02:54:27

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	102K
描述
10A Surface Mount High Power Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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MBRB1045CT 数据手册

MBRB1040CT THRU MBRB10200CT

10A Surface Mount High Power Schottky Barrier Rectifiers

■ Features

■ Outline

D²PAK(TO-263)

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Suffix "G" indicates Halogen-free part, ex.MBRB1040CTG.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.411(10.45)

0.380(9.65)

0.245(6.22)

0.055(1.40)

0.031(0.80)

0.190(4.83)

0.160(4.06)

0.055(1.40)

0.045(1.14)

MIN

0.370(9.40)

0.320(8.13)

Marking code

0~0.012(0~0.30)

0.110(2.79)

0.090(2.29)

0.228(5.80)

0.173(4.40)

■ Mechanical data

0.063(1.60)

0.024(0.60)

• Epoxy : UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-263 / D²PAK

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity: Indicated by cathode band.

• Mounting Position : Any.

0.024(0.60)

0.011(0.28)

0.205(5.20)

0.189(4.80)

PIN 1

PIN 3

PIN 2

Dimensions in inches and (millimeters)

• Weight : Approximated 1.70 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

125

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

@5A, T_A= 25^OC

V_F(V)

forward voltage

@5A, T_A= 125^OC

V_F(V)

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

MBRB1040CT MBRB1040CT

MBRB1045CT MBRB1045CT

MBRB1060CT MBRB1060CT

MBRB1065CT MBRB1065CT

MBRB10100CT MBRB10100CT

MBRB10150CT MBRB10150CT

MBRB10200CT MBRB10200CT

31.5

0.70

0.79

0.57

0.70

-55 ~ +150

-55 ~ +175

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

Document ID : DS-12K63

Issued Date : 2010/05/05

Revised Date : 2012/05/31

Revision : C1

12 3

中文翻译

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与MBRB1045CT相关器件

型号	品牌	获取价格	描述	数据表
MBRB1045CT-B	MCC	获取价格	暂无描述
MBRB1045CT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, ROHS COMPLIANT, PL
MBRB1045CT-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, D2PACK-3/2
MBRB1045CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, GREEN, PLASTIC, D2PAK-3
MBRB1045CTS	YANGJIE	获取价格	TO-263
MBRB1045CT-T	MCC	获取价格	Rectifier Diode,
MBRB1045CT-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, D2PAK-3
MBRB1045CT-TP-HF	MCC	获取价格	Rectifier Diode,
MBRB1045-E3	VISHAY	获取价格	DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode
MBRB1045-E3/31	VISHAY	获取价格	DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode

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