Datasheet > MBRB1045-HE3/81

MBRB1045-HE3/81

更新时间： 2024-01-15 22:02:14

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	130K
描述
DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBRB1045-HE3/81 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	D2PAK
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

MBRB1045-HE3/81 数据手册

MBR(F,B)1035 thru MBR(F,B)1060

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

TO-220AC

ITO-220AC

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

MBR10xx

PIN 1

MBRF10xx

PIN 1

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

CASE

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters and polarity protection application.

MBRB10xx

PIN 1

HEATSINK

PIN 2

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

PRIMARY CHARACTERISTICS

Epoxy meets UL 94V-0 flammability rating

I_F(AV)

10 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

V_RRM

I_FSM

35 V to 60 V

150 A

V_F

0.57 V, 0.70 V

150 °C

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR1035 MBR1045 MBR1050 MBR1060

V_RRM35 45 50 60

I_F(AV)

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Peak repetitive reverse current at t_p= 2.0 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

T_J

1.0

0.5

V/µs

°C

10 000

Operating junction temperature range

Storage temperature range

- 65 to + 150

- 65 to + 175

T_STG

°C

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

V_AC

1500

Document Number: 88669

Revision: 07-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与MBRB1045-HE3/81相关器件

型号	品牌	获取价格	描述	数据表
MBRB1045HE3_A/I	VISHAY	获取价格	DIODE SCHOTTKY 45V 10A TO263AB
MBRB1045HE3_A/P	VISHAY	获取价格	DIODE SCHOTTKY 45V 10A TO263AB
MBRB1045HE3_B/I	VISHAY	获取价格	Rectifier Diode,
MBRB1045HE3_B/P	VISHAY	获取价格	Rectifier Diode,
MBRB1045PBF	VISHAY	获取价格	Schottky Rectifier, 10 A
MBRB1045PBF	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBRB1045T4	ONSEMI	获取价格	SWITCHMODE Schottky Power Rectifier
MBRB1045-T4	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, PLASTIC, D2PAK-3
MBRB1045T4G	ONSEMI	获取价格	SWITCHMODE Schottky Power Rectifier
MBRB1045TRL	VISHAY	获取价格	Schottky Rectifier, 10 A

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