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MBRB1045TRR PDF预览

MBRB1045TRR

更新时间: 2024-01-08 03:04:20
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 106K
描述
Schottky Rectifier, 10 A

MBRB1045TRR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.57 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1060 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30

MBRB1045TRR 数据手册

 浏览型号MBRB1045TRR的Datasheet PDF文件第2页浏览型号MBRB1045TRR的Datasheet PDF文件第3页浏览型号MBRB1045TRR的Datasheet PDF文件第4页浏览型号MBRB1045TRR的Datasheet PDF文件第5页浏览型号MBRB1045TRR的Datasheet PDF文件第6页 
MBRB10.. Series  
Vishay High Power Products  
Schottky Rectifier, 10 A  
FEATURES  
• 150 °C TJ operation  
• D2PAK package  
Base  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
3
1
• Guard ring for enhanced ruggedness and long term  
reliability  
D2PAK  
N/C  
Anode  
• Designed and qualified for Q101 level  
DESCRIPTION  
This Schottky rectifier has been optimized for low reverse  
leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C junction  
temperature. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
PRODUCT SUMMARY  
IF(AV)  
10 A  
35/45 V  
15 mA at 125 °C  
VR  
IRM  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
TC = 135 °C  
A
20  
VRRM  
IFSM  
35/45  
1060  
V
A
tp = 5 µs sine  
10 Apk, TJ = 125 °C  
Range  
VF  
0.57  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
MBRB1035  
MBRB1045  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
Peak repetitive forward current  
IF(AV)  
TC = 135 °C, rated VR  
10  
20  
IFRM  
Rated VR, square wave, 20 kHz, TC = 135 °C  
Following anyrated load condition  
and with rated VRRM applied  
A
5 µs sine or 3 µs rect. pulse  
1060  
Non-repetitive surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
150  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 4 mH  
8
2
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Document Number: 93975  
Revision: 22-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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