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MBRB1050-E3/81 PDF预览

MBRB1050-E3/81

更新时间： 2024-11-02 22:57:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 147K
描述
DIODE SCHOTTKY 50V 10A TO263AB

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MBRB1050-E3/81 数据手册

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MBR10xx, MBRF10xx, MBRB10xx  
www.vishay.com  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (for TO-263AB package)  
2
2
1
MBR1045  
MBR1060  
PIN 1  
1
MBRF1045  
MBRF1060  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AC and ITO-220AC package)  
PIN 1  
CASE  
• AEC-Q101 qualified available  
PIN 2  
PIN 2  
(for ITO-220AC and D2PAK (TO-263AB) package)  
D2PAK (TO-263AB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
K
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
1
MBRB1045  
MBRB1060  
PIN 1  
K
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
PIN 2  
HEATSINK  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
Available  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
10 A  
Polarity: as marked  
VRRM  
IFSM  
45 V, 60 V  
150 A  
Mounting Torque: 10 in-lbs maximum  
VF  
0.57 V, 0.70 V  
TJ max.  
150 °C  
Package  
Circuit configuration  
TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
Single  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
MBR1045  
MBR1060  
UNIT  
Maximum repetitive peak reverse voltage  
45  
60  
V
A
Maximum average forward rectified current (fig. 1)  
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load  
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Voltage rate of change (rated VR)  
10  
150  
A
V/μs  
°C  
IRRM  
1.0  
0.5  
dV/dt  
TJ  
10 000  
-65 to +150  
-65 to +175  
1500  
Operating junction and storage temperature range  
TSTG  
VAC  
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
V
Revision: 19-Sep-2018  
Document Number: 88669  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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MBRB1050-E3/81 替代型号

型号 品牌 替代类型 描述 数据表
MBRB1050HE3/81 VISHAY

完全替代

 DIODE SCHOTTKY 50V 10A TO263AB
MBRB1050HE3/45 VISHAY

完全替代

 DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB1050-E3/45 VISHAY

类似代替

 DIODE 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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