Datasheet > MBRB10100CT-8W

MBRB10100CT-8W

更新时间： 2024-11-24 01:05:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	93K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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MBRB10100CT-8W 数据手册

MBRB1090-M3, MBRB10100-M3

www.vishay.com

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-263AB

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

MBRB1090

MBRB10100

PIN 1

PIN 2

TYPICAL APPLICATIONS

HEATSINK

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, or

polarity protection application.

PRIMARY CHARACTERISTICS

Package

TO-263AB

10 A

MECHANICAL DATA

I_F(AV)

Case: TO-263AB

V_RRM

90 V, 100 V

150 A

Molding compound meets UL 94 V-0 flammability rating

I_FSM

V_F

0.65 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

T_Jmax.

Diode variation

150 °C

Single die

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBRB1090

MBRB10100

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

100

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 133 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

150

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

MAX.

0.80

0.65

0.75

100

UNIT

I_F= 10 A

T_C= 25 °C

T_C= 125 °C

T_J= 25 °C

T_J= 125 °C

Maximum instantaneous

forward voltage

I_F= 10 A

I_F= 20 A

V_F

(1)

μA

Maximum reverse current per at working

peak reverse voltage ⁽²⁾

I_R

6.0

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 15-May-13

Document Number: 87981

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与MBRB10100CT-8W相关器件

型号	品牌	获取价格	描述	数据表
MBRB10100CT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, D2PAK-3
MBRB10100CT-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
MBRB10100CT-E3/4W	VISHAY	获取价格	DIODE ARRAY SCHOTTKY 100V TO263
MBRB10100CT-E3/8W	VISHAY	获取价格	DIODE ARRAY SCHOTTKY 100V TO263
MBRB10100CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, GREEN, PLASTIC, D2PAK-3
MBRB10100CTH-BP-HF	MCC	获取价格	暂无描述
MBRB10100CTH-TP-HF	MCC	获取价格	Rectifier Diode,
MBRB10100CT-M3	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
MBRB10100CT-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-263AB,
MBRB10100CTQ	MCC	获取价格	Tape:800pcs/Reel,8K/Ctn.;

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