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MBRB10100CT-BP PDF预览

MBRB10100CT-BP

更新时间: 2024-11-23 20:08:23
品牌 Logo 应用领域
美微科 - MCC 功效瞄准线二极管
页数 文件大小 规格书
3页 479K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, D2PAK-3

MBRB10100CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-263
包装说明:D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.11
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

MBRB10100CT-BP 数据手册

 浏览型号MBRB10100CT-BP的Datasheet PDF文件第2页浏览型号MBRB10100CT-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MBRB10100CT  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Metal of Silicon Rectifier, Majority Carrier Conduction  
Low Power Loss  
10 Amp Schottky  
Barrier Rectifier  
100 Volts  
·
High Current Capability, High Efficiency  
Halogen free available upon request by adding suffix "-HF"  
Guard Ring For Transient Protection  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
D2-PACK  
Maximum Ratings  
S
·
Operating Temperature: -50to +150℃  
Storage Temperature: -50to +150℃  
Thermal resistance junction to case: 2.5oC/W  
V
A
1
2
3
G
Maximum  
B
4
Maximum  
DC  
Blocking  
Voltage  
MCC  
Part  
Number  
Recurrent  
Peak  
Maximum  
RMS  
Voltage  
Device  
Marking  
Reverse  
Voltage  
D
C
MBRB10100CT  
MBRB10100CT  
100V  
70V  
100V  
H
E
J
K
Electrical Characteristics @ 25°C Unless Otherwise Specified  
1
2 , 4  
HEATSINK  
Average Forward  
T = 100℃  
c
IF(AV)  
10 A  
3
Current  
DIMENSIONS  
Peak Forward Surge  
Current  
INCHES  
MM  
DIM  
NOTE  
IFSM  
150A  
8.3ms, half sine  
MIN  
.320  
.380  
.160  
.020  
.045  
.095  
.096  
.014  
.090  
.575  
.045  
MAX  
MIN  
8.13  
9.65  
4.06  
0.51  
1.14  
2.41  
2.43  
0.35  
2.29  
14.60  
1.14  
MAX  
9.14  
10.45  
4.83  
0.89  
1.40  
2.67  
3.03  
0.53  
2.79  
15.80  
1.40  
A
B
C
D
E
G
H
J
.359  
.411  
.190  
.035  
.055  
.105  
.120  
.021  
.110  
.625  
.055  
Maximum  
Instantaneous  
Forward Voltage  
I
I
FM = 5.0A; TJ = 25℃  
FM = 5.0A; TJ = 125℃  
0.85V  
0.75V  
VF  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
K
S
V
TJ = 25℃  
0.1mA  
15mA TJ = 125℃  
IR  
SUGGESTED SOLDER PAD LAYOUT  
.740  
18.79  
.065  
Inches  
mm  
1.65  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
.420  
10.66  
.070  
1.78  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
.120  
3.05  
.330  
8.38  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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