MBR(F,B)1090 & MBR(F,B)10100
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AC
ITO-220AC
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
2
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
1
1
MBR1090
MBR10100
PIN 1
MBRF1090
MBRF10100
PIN 1
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
CASE
PIN 2
PIN 2
TO-263AB
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
K
2
TYPICAL APPLICATIONS
1
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MBRB1090
MBRB10100
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
IF(AV)
10 A
VRRM
IFSM
90 V, 100 V
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
VF
0.65 V
TJ max.
150 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
VRRM
VRWM
VDC
MBR1090
MBR10100
100
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
90
90
90
V
V
V
A
100
Maximum DC blocking voltage
100
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
0.5
A
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
1500
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 min
VAC
V
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