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MBRB10200CT PDF预览

MBRB10200CT

更新时间: 2024-11-11 15:18:03
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 157K
描述
TO-263

MBRB10200CT 数据手册

 浏览型号MBRB10200CT的Datasheet PDF文件第2页浏览型号MBRB10200CT的Datasheet PDF文件第3页浏览型号MBRB10200CT的Datasheet PDF文件第4页 
RoHS  
MBRB10100CT THRU MBRB10200CT  
Schottky Diodes  
COMPLIANT  
Features  
High frequency operation  
High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Guard ring for enhanced ruggedness and long term reliability  
Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃  
Typical Applications  
Typical applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
Mechanical Data  
ackage: TO-263  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Polarity: As marked  
(T =25Unless otherwise specified  
Maximum Ratings  
a
MBRB10100CT  
MBRB10150CT  
MBRB10150CT  
150  
MBRB10200CT  
MBRB10200CT  
200  
PARAMETER  
SYMBOL UNIT  
MBRB10100CT  
100  
Device marking code  
V
I
Repetitive Peak Reverse Voltage  
V
A
RRM  
Average Rectified Output Current @60Hz sine  
I
O
10  
120  
60  
wave, R-load, T =25℃  
a
Surge(Non-repetitive)Forward Current @60H  
z
A
FSM  
I2t  
half sine-wave, 1 cycle, T =25℃  
a
Current Squared Time @1mst<8.3ms  
Tj=25℃,  
A2s  
Storage Temperature  
Junction Temperature  
T
stg  
-55 ~ +175  
-55 ~ +175  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
MBRB10100CT  
MBRB10150CT  
MBRB10200CT  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
V
V
FM  
I
=5.0A  
0.8  
0.85  
0.1  
0.9  
FM  
V
=V  
RM RRM  
I
RRM1  
Maximum DC reverse current  
at rated DC blocking voltage per  
diode  
T =25℃  
a
mA  
V
=V  
RM RRM  
I
20  
RRM2  
T =125℃  
a
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B919  
www.21yangjie.com  
Rev.1.0,6-Jun-18  

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