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MBRB10100-M3 PDF预览

MBRB10100-M3

更新时间： 2024-11-24 01:05:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 93K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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MBRB10100-M3 数据手册

 浏览型号MBRB10100-M3的Datasheet PDF文件第2页浏览型号MBRB10100-M3的Datasheet PDF文件第3页浏览型号MBRB10100-M3的Datasheet PDF文件第4页 
MBRB1090-M3, MBRB10100-M3  
www.vishay.com  
Vishay General Semiconductor  
High-Voltage Trench MOS Barrier Schottky Rectifier  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-263AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
K
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C  
2
1
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MBRB1090  
MBRB10100  
PIN 1  
PIN 2  
K
TYPICAL APPLICATIONS  
HEATSINK  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, or  
polarity protection application.  
PRIMARY CHARACTERISTICS  
Package  
TO-263AB  
10 A  
MECHANICAL DATA  
IF(AV)  
Case: TO-263AB  
VRRM  
90 V, 100 V  
150 A  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
VF  
0.65 V  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
TJ max.  
Diode variation  
150 °C  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
MBRB1090  
MBRB10100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
100  
100  
100  
V
V
V
A
VRWM  
VDC  
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
10  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
IFSM  
150  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MAX.  
0.80  
0.65  
0.75  
100  
UNIT  
IF = 10 A  
TC = 25 °C  
TC = 125 °C  
TC = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
Maximum instantaneous  
forward voltage  
IF = 10 A  
IF = 20 A  
VF  
V
(1)  
μA  
Maximum reverse current per at working  
peak reverse voltage (2)  
IR  
6.0  
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
Revision: 15-May-13  
Document Number: 87981  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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