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MBRB1030CT-B PDF预览

MBRB1030CT-B

更新时间: 2024-01-12 12:11:36
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
2页 92K
描述
Rectifier Diode,

MBRB1030CT-B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:not_compliant
风险等级:5.69其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:125 A元件数量:2
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:30 V
最大反向电流:500 µA表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

MBRB1030CT-B 数据手册

 浏览型号MBRB1030CT-B的Datasheet PDF文件第2页 
M C C  
MBRB1030CT  
THRU  
MBRB1045CT  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
10 Amp  
Schottky  
Barrier Rectifier  
30 to 45 Volts  
Features  
·
·
·
·
·
Meatl of Silicon Rectifier, Majority Conducton  
Guard ring for transient protection  
Low Forward Voltage Drop  
High Current Capability, High Efficiency  
Low Power Loss  
D2PAK  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
K
MCC  
Catalog  
Number  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
30V  
Maximum Maximum  
I
A
RMS  
Voltage  
DC  
Blocking  
Voltage  
30V  
K
D
C
MBRB1030CT  
MBRB1035CT  
MBRB1040CT  
MBRB1045CT  
21V  
B
K
1
2
35V  
40V  
45V  
24.5V  
28V  
35V  
40V  
F
G
31.5V  
45V  
H
E
J
PIN 1  
PIN 2  
K
HEATSINK  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
10 A  
TC = 95°C  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
IFSM  
125A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢇ ꢇ ꢇ ꢇ  
INCHES  
ꢂꢁꢄ  
MM  
ꢀꢁꢂ  
A
B
ꢂꢈꢉ  
.421  
.625  
.364  
ꢂꢁꢄ  
9.65  
14.60  
8.25  
ꢂꢈꢉ  
10.69  
15.88  
9.25  
ꢄꢆꢊꢃ  
VF  
.55V  
IFM = 5A;  
TJ = 25°C  
.380  
.575  
.325  
C
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
D
E
F
G
H
.045  
.020  
.090  
.090  
.080  
.055  
.045  
.110  
.110  
.115  
.055  
.025  
1.14  
0.51  
2.29  
2.29  
2.03  
1.14  
1.40  
1.14  
2.79  
2.79  
2.92  
1.40  
IR  
0.5mA  
TJ = 25°C  
I
J
.045  
.012  
0.30  
0.64  
Typical Junction  
Capacitance  
CJ  
200pF Measured at  
1.0MHz,  
K
.172  
.190  
4.37  
4.83  
VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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