Datasheet > MBRB1035/81-E3

MBRB1035/81-E3

更新时间： 2024-11-24 04:37:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	71K
描述
DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRB1035/81-E3 数据手册

MBR10xx, MBRF10xx & MBRB10xx Series

Vishay Semiconductors

formerly General Semiconductor

Schottky Barrier Rectifier

Reverse Voltage 35 to 60V

Forward Current 10A

ITO-220AC (MBRF10xx)

0.188 (4.77)

0.172 (4.36)

0.405 (10.27)

0.383 (9.72)

0.110 (2.80)

0.100 (2.54)

TO-220AC (MBR10xx)

0.131 (3.39)

0.122 (3.08)

0.140 (3.56)

0.130 (3.30)

DIA.

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.154 (3.91)

0.148 (3.74)

DIA.

0.370 (9.40)

0.360 (9.14)

0.055 (1.39)

0.045 (1.14)

0.676 (17.2)

0.646 (16.4)

0.600 (15.5)

0.580 (14.5)

0.350 (8.89)

0.330 (8.38)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.573 (14.55)

0.191 (4.85)

0.171 (4.35)

0.410 (10.41)

0.390 (9.91)

0.350 (8.89)

0.330 (8.38)

0.635 (16.13)

0.625 (15.87)

0.110 (2.80)

0.100 (2.54)

0.560 (14.22)

0.530 (13.46)

0.060 (1.52)

PIN 1

1.148 (29.16)

1.118 (28.40)

0.160 (4.06)

0.140 (3.56)

0.110 (2.79)

0.100 (2.54)

PIN 2

0.037 (0.94)

0.027 (0.69)

0.560 (14.22)

0.022 (0.55)

0.014 (0.36)

PIN 1

PIN 2

0.205 (5.20)

0.195 (4.95)

0.530 (13.46)

CASE

0.105 (2.67)

TO-263AB (MBRB10xx)

0.037 (0.94)

0.027 (0.68)

0.095 (2.41)

0.022 (0.56)

0.014 (0.36)

0.190 (4.83)

0.160 (4.06)

0.411 (10.45)

0.380 (9.65)

0.205 (5.20)

0.195 (4.95)

0.055 (1.40)

0.045 (1.14)

0.245 (6.22)

MIN

Mounting Pad Layout TO-263AB

0.42

(10.66)

0.055 (1.40)

0.047 (1.19)

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.591 (15.00)

Dimensions in inches

and (millimeters)

0.33

(8.38)

0-0.01 (0-0.254)

0.63

(17.02)

0.110 (2.79)

0.090 (2.29)

0.027 (0.686)

0.037 (0.940)

0.021 (0.53)

0.014 (0.36)

PIN 1

PIN 2

K - HEATSINK

0.105 (2.67)

0.095 (2.41)

0.140 (3.56)

0.110 (2.79)

0.08

0.205 (5.20)

0.195 (4.95)

(2.032)

0.12

(3.05)

0.24

(6.096)

Features

Mechanical Data

• Plastic package has Underwriters Laboratory

Flammability Classifications 94V-0

Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded

plastic body

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency

• Guardring for overvoltage protection

Terminals: Plated leads, solderable per MIL-STD-750,

Method 2026

Polarity: As marked

Mounting Position: Any

Mounting Torque: 10 in-lbs maximum

Weight: 0.08 ounce, 2.24 grams

• For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

• High temperature soldering guaranteed:

250°C/10 seconds, 0.25" (6.35mm) from case

Document Number 88669

1-Jul-02

www.vishay.com

12 3 4

中文翻译

下载PDF

与MBRB1035/81-E3相关器件

型号	品牌	获取价格	描述	数据表
MBRB1035CT	BL Galaxy Electrical	获取价格	2SCHOTTKY BARRIER RECTIFIER
MBRB1035CT	MCC	获取价格	10 Amp Schottky Barrier Rectifier 30 to 45 Volts
MBRB1035CT	BL Galaxy Electrical	获取价格	10A,35V,Schottky Barrier Rectifiers
MBRB1035CT	YANGJIE	获取价格	TO-263
MBRB1035CT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 35V V(RRM), Silicon, ROHS COMPLIANT, PL
MBRB1035CT-BP-HF	MCC	获取价格	暂无描述
MBRB1035CT-T	MCC	获取价格	Rectifier Diode,
MBRB1035CT-TP	MCC	获取价格	暂无描述
MBRB1035-E3/81	VISHAY	获取价格	DIODE SCHOTTKY 35V 10A TO263AB
MBRB1035-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, LEAD FREE, PLASTIC, D2PAK-3

与MBRB1035/81-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRB1035/81-E3

MBRB1035/81-E3 数据手册

与MBRB1035/81-E3相关器件

与MBRB1035/81-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRB1035/81-E3

MBRB1035/81-E3 数据手册

与MBRB1035/81-E3相关器件

与MBRB1035/81-E3相关文章

您还可以找

您在本页遇到什么问题？