MBRB1035CT-TP

更新时间： 2024-11-21 13:11:11

品牌	Logo	应用领域
美微科 - MCC		整流二极管
页数	文件大小	规格书
3页	235K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRB1035CT-TP 数据手册

M C C

Micro Commercial Components

MBRB1030CT

THRU

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MBRB1060CT

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

10 Amp

Schottky

•

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Meatl of Silicon Rectifier, Majority Conducton

Barrier Rectifier

30 to 60 Volts

•

Guard ring for transient protection

Low Forward Voltage Drop and Low Power Loss

High Current Capability, High Efficiency

D²-PACK

Maximum Ratings

•

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Maximum

Reccurrent

Peak Reverse

Voltage

30V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

30V

MBRB1030CT

MBRB1035CT

MBRB1040CT

MBRB1045CT

MBRB1050CT

MBRB1060CT

21V

24.5V

28V

35V

40V

35V

40V

45V

50V

31.5V

35V

42V

45V

50V

60V

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

MIN

DIM

NOTE

Average Forward

Current

I_F(AV)

10 A

MAX

MIN

8.13

9.65

4.06

0.51

1.14

2.41

2.43

0.35

2.29

14.60

1.14

MAX

9.14

10.45

4.83

0.89

1.40

2.67

3.03

0.53

2.79

15.80

1.40

0.15

T_C= 95°C

.320

.380

.160

.020

.045

.095

.096

.014

.090

.575

.045

.359

.411

.190

.035

.055

.105

.120

.021

.110

.625

.055

.006

Peak Forward Surge

Current

Maximum

I_FSM

125A

8.3ms, half sine

Instantaneous

Forward Voltage

V_F

.55V

I_FM= 5A;

T_J= 25°C

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

SUGGESTED SOLDER PAD LAYOUT

I_R

0.5mA

T_J= 25°C

.740

18.79

.065

Inches

1.65

Typical Junction

Capacitance

C_J

200pF Measured at

1.0MHz,

V_R=4.0V

.420

10.66

.⁰⁷⁰

1.78

.120

3.05

.330

8.38

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

w. wwm c c s e m i.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

下载PDF

与MBRB1035CT-TP相关器件

型号	品牌	获取价格	描述	数据表
MBRB1035-E3/81	VISHAY	获取价格	DIODE SCHOTTKY 35V 10A TO263AB
MBRB1035-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, LEAD FREE, PLASTIC, D2PAK-3
MBRB1035-GT4	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, LEAD FREE, PLASTIC, D2PAK-3
MBRB1035HE3/45	VISHAY	获取价格	DIODE SCHOTTKY 35V 10A TO263AB
MBRB1035-HE3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB1035-HE3/81	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB1035PBF	VISHAY	获取价格	Schottky Rectifier, 10 A
MBRB1035PBF	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBRB1035PBF_10	VISHAY	获取价格	Schottky Rectifier, 10 A
MBRB1035S-G	SENSITRON	获取价格	Rectifier Diode,

与MBRB1035CT-TP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRB1035CT-TP

MBRB1035CT-TP 数据手册

与MBRB1035CT-TP相关器件

与MBRB1035CT-TP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRB1035CT-TP

MBRB1035CT-TP 数据手册

与MBRB1035CT-TP相关器件

与MBRB1035CT-TP相关文章

您还可以找

您在本页遇到什么问题？