Datasheet > MBRB10200CTQ

MBRB10200CTQ

更新时间： 2024-11-11 17:01:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	257K
描述
TO-263

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中文翻译

获取价格

数据手册

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MBRB10200CTQ 数据手册

RoHS

MBRB10200CTQ

COMPLIANT

Schottky Diodes

Features

● High frequency operation

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Part no. with suffix “Q” means AEC-Q101 qualified

Typical Applications

Typical applications are in switching power supplies, converters,

automotive, freewheeling diodes, and reverse battery protection.

Mechanical Data

●

ackage: TO-263

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

MBRB10200CTQ

MBRB10200CT

200

PARAMETER

SYMBOL UNIT

Device marking code

V_RRM

I_O

Repetitive peak reverse voltage

Average Rectified Output Current

@60Hz -sine wave, T_C=150℃

150

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, T_a=25℃

I_FSM

Current Squared Time

@1ms≤t≤8.3ms T_J=25℃

A²s

℃

I²t

T_stg

T_J

Storage Temperature

Junction Temperature

-55 ~ +175

（T =25℃Unless otherwise specified）

■Electrical Characteristics

TEST CONDITIONS

Typ

0.83

0.7

105

Max

0.9

0.8

PARAMETER

SYMBOL

UNIT

I_F=5A

T_J=25℃

Instantaneous forward voltage per diode

Typical junction capacitance per diode

Instantaneous reverse current per diode

V_F

C_J

I_R

I_F=5A

T_J=125℃

V_R=4V, f=1 MHz

0.1

T_J=25℃

V_R=200V

T_J=125℃

(T =25℃Unless otherwise specified)

■Thermal Characteristics

MBRB10200CTQ

PARAMETER

SYMBOL

UNIT

℃/W

R_θJ-A

Typical thermal resistance

per diode

R_θJ-C

1 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-B2752

Rev.1.1,08-Apr-23

www.21yangjie.com

12 3 4

中文翻译

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