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MBRB10200CTQ PDF预览

MBRB10200CTQ

更新时间: 2024-11-24 17:01:47
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 257K
描述
TO-263

MBRB10200CTQ 数据手册

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RoHS  
MBRB10200CTQ  
COMPLIANT  
Schottky Diodes  
Features  
● High frequency operation  
● High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
● Guard ring for enhanced ruggedness and long term reliability  
● Part no. with suffix “Q” means AEC-Q101 qualified  
Typical Applications  
Typical applications are in switching power supplies, converters,  
automotive, freewheeling diodes, and reverse battery protection.  
Mechanical Data  
ackage: TO-263  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Polarity: As marked  
(T =25Unless otherwise specified  
Maximum Ratings  
a
MBRB10200CTQ  
MBRB10200CT  
200  
PARAMETER  
SYMBOL UNIT  
Device marking code  
VRRM  
IO  
Repetitive peak reverse voltage  
V
A
Average Rectified Output Current  
@60Hz -sine wave, TC=150℃  
10  
150  
94  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
A
Current Squared Time  
@1ms≤t≤8.3ms TJ=25℃  
A2s  
I2t  
Tstg  
TJ  
Storage Temperature  
Junction Temperature  
-55 ~ +175  
-55 ~ +175  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST CONDITIONS  
Typ  
0.83  
0.7  
105  
-
Max  
0.9  
0.8  
-
PARAMETER  
SYMBOL  
UNIT  
IF=5A  
TJ=25  
Instantaneous forward voltage per diode  
Typical junction capacitance per diode  
Instantaneous reverse current per diode  
VF  
CJ  
IR  
V
IF=5A  
TJ=125℃  
pF  
VR=4V, f=1 MHz  
0.1  
20  
TJ=25℃  
VR=200V  
mA  
-
TJ=125℃  
(T =25Unless otherwise specified)  
■Thermal Characteristics  
a
MBRB10200CTQ  
PARAMETER  
SYMBOL  
UNIT  
/W  
/W  
RθJ-A  
50  
2
Typical thermal resistance  
per diode  
RθJ-C  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B2752  
Rev.1.1,08-Apr-23  
www.21yangjie.com  

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