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MBR6035PT PDF预览

MBR6035PT

更新时间: 2024-01-26 07:57:04
品牌 Logo 应用领域
SIRECTIFIER 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 128K
描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

MBR6035PT 技术参数

生命周期:Contact Manufacturer包装说明:O-MUPM-D1
Reach Compliance Code:unknown风险等级:5.67
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:DO-203AB
JESD-30 代码:O-MUPM-D1最大非重复峰值正向电流:900 A
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:60 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT最大重复峰值反向电压:35 V
最大反向电流:1000 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:SOLDER LUG端子位置:UPPER
Base Number Matches:1

MBR6035PT 数据手册

 浏览型号MBR6035PT的Datasheet PDF文件第2页 
MBR6030PT thru MBR6045PT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
C
A
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
A
C
A
C(TAB)  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
A=Anode, C=Cathode, TAB=Cathode  
5.4  
6.2 0.212 0.244  
VRRM  
V
VRMS  
V
VDC  
V
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
MBR6030PT  
MBR6035PT  
MBR6040PT  
MBR6045PT  
30  
21  
30  
35  
40  
45  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
35  
24.5  
28  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
40  
45  
31.5  
N
1.5 2.49 0.087 0.102  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=125oC  
60  
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
500  
A
IF=30A @TJ=25oC  
Maximum Forward  
0.62  
0.55  
0.75  
VF  
IR  
IF=30A @TJ=125oC  
V
Voltage (Note 1)  
IF=60A @TJ=25oC  
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
1.0  
50  
mA  
@TJ=100oC  
1.0  
oC/W  
pF  
oC  
ROJC  
CJ  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance Per Element (Note 3)  
Operating Temperature Range  
700  
-55 to +150  
-55 to +175  
TJ  
TSTG  
Storage Temperature Range  
oC  
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.  
2. Thermal Resistance Junction To Case.  
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* Case: TO-247AD molded plastic  
* Polarity: As marked on the body  
* Weight: 0.2 ounces, 5.6 grams  
* Mounting position: Any  
* High current capability, low VF  
* High surge capacity  
* Plastic package has UL flammability classification 94V-0  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

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