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MBR6045_V01 PDF预览

MBR6045_V01

更新时间: 2024-11-22 01:21:59
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3页 807K
描述
Silicon Power Schottky Diode

MBR6045_V01 数据手册

 浏览型号MBR6045_V01的Datasheet PDF文件第2页浏览型号MBR6045_V01的Datasheet PDF文件第3页 
MBR6045 thru MBR60100R  
VRRM = 45 V - 100 V  
IF = 60 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 45 V to 100 V VRRM  
DO-5 Package  
• Not ESD Sensitive  
C
A
C
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
A
Stud Stud  
(R)  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR6080 (R) MBR60100 (R)  
Parameter  
Symbol  
MBR6045 (R) MBR6060 (R)  
Unit  
VRRM  
VRMS  
VDC  
IF  
80  
50  
80  
60  
100  
70  
Repetitive peak reverse voltage  
RMS reverse voltage  
45  
32  
45  
60  
60  
42  
60  
60  
V
V
V
A
100  
60  
DC blocking voltage  
TC ≤ 100 °C  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
TC = 25 °C, tp = 8.3 ms  
700  
700  
700  
700  
A
Tj  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MBR6080 (R) MBR60100 (R)  
Parameter  
Symbol  
MBR6045 (R) MBR6060(R)  
Unit  
V
VF  
IR  
IF = 60 A, Tj = 25 °C  
VR = 20 V, Tj = 25 °C  
VR = 20 V, Tj = 125 °C  
0.84  
5
0.84  
5
Diode forward voltage  
Reverse current  
0.65  
5
0.75  
5
mA  
150  
150  
150  
150  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
1.0  
1.0  
1.0  
1.0  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf  

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