MBR6045WT

更新时间： 2024-02-15 23:56:31

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关局域网
页数	文件大小	规格书
3页	117K
描述
SWITCHMODE Power Rectifier

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中文翻译

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技术参数
数据手册
替代型号

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MBR6045WT 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.38
Base Number Matches：	1

MBR6045WT 数据手册

MBR6045WT

SWITCHMODEt

Power Rectifier

The SWITCHMODE power rectifier employs the use of the

Schottky Barrier principle with a Platinum barrier metal.

Features

http://onsemi.com

• Dual Diode Construction; Terminals 1 and 3 May Be Connected for

Parallel Operation at Full Rating

• 45 V Blocking Voltage

• Low Forward Voltage Drop

• Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns)

• 175°C Operating Junction Temperature

• Pb−Free Package is Available*

SCHOTTKY BARRIER

RECTIFIER

60 AMPERES, 45 VOLTS

2, 4

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 4.3 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

TO−247

CASE 340L

STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

MARKING DIAGRAM

Average Rectified Forward Current

F(AV)

(Rated V , T = 125°C)

Per Diode

Per Device

Peak Repetitive Forward Current,

(Rated V , Square Wave,

500

2.0

FRM

MBR6045WT

AYWWG

20 kHz, T = 90°C)

Per Diode

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

FSM

RRM

Peak Repetitive Reverse Current

(2.0 ms, 1.0 kHz)

Storage Temperature Range

−65 to +175

175

°C

stg

Operating Junction Temperature (Note 1)

= Assembly Location

= Year

Peak Surge Junction Temperature

(Forward Current Applied)

J(pk)

= Work Week

= Pb−Free Package

Voltage Rate of Change

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

1. The heat generated must be less than the thermal conductivity from

Device

Package

Shipping

Junction−to−Ambient: dP /dT < 1/R .

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MBR6045WT

TO−247

30 Units/Rail

MBR6045WTG

TO−247

(Pb−Free)

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

March, 2010 − Rev. 9

MBR6045WT/D

12 3

中文翻译

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MBR6045WT 替代型号

型号	品牌	替代类型	描述	数据表
MBR6045WTG	ONSEMI	类似代替	SWITCHMODE Power Rectifier
STPS6045CW	STMICROELECTRONICS	功能相似	POWER SCHOTTKY RECTIFIER
DSSK80-0045B	IXYS	功能相似	Power Schottky Rectifier with common cathode

与MBR6045WT相关器件

型号	品牌	获取价格	描述	数据表
MBR6045WT-CG	SENSITRON	获取价格	Rectifier Diode,
MBR6045WTG	ONSEMI	获取价格	SWITCHMODE Power Rectifier
MBR6045WT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-247AD, GREEN, PLASTIC PACK
MBR6045WT-N3	VISHAY	获取价格	Schottky Rectifier, 2 x 30 A
MBR6045WTPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 30 A
MBR6045WTPBF	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBR6045WTPBF_12	VISHAY	获取价格	Schottky Rectifier, 2 x 30 A
MBR6045WT-SG	SENSITRON	获取价格	Rectifier Diode,
MBR6050PT	PANJIT	获取价格	60 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBR6050PT	LGE	获取价格	Schottky Barrier Rectifiers

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