Datasheet > MBR6060

MBR6060

更新时间： 2024-11-12 12:01:19

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	123K
描述
Schottky Power Diode, 60A

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数据手册

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MBR6060 数据手册

MBR6045 thru

MBR60100R

Naina Semiconductor Ltd.

Schottky Power Diode, 60A

Features

•

Fast Switching

Low forward voltage drop

High surge capability

High efficiency, low power loss

Normal and Reverse polarity

DO-203AB (DO-5)

Maximum Ratings (T_J= 25^oC, unless otherwise noted)

Test

Conditions

Parameter

Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit

Repetitive peak reverse voltage

RMS reverse voltage

V_RRM

V_RMS

V_DC

I_F

100

DC blocking voltage

100

Continuous forward current

T_C≤ 100^oC

T_C= 25^oC

Surge non-repetitive forward

current, half-sine wave

I_FSM

V_F

700

0.65

700

0.75

700

0.84

700

0.84

I_F= 60 A

T_J= 25^oC

Forward voltage

V_R= 20V,

T_J= 25^oC

Reverse current

I_R

V_R= 20V,

T_J= 125^oC

150

Thermal & Mechanical Specifications (T_J= 25^oC, unless otherwise noted)

Parameters

Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R)

Unit

Maximum thermal resistance, junction to

case

R_th(JC)

1.0

^oC/W

Operating junction temperature range

Storage temperature

T_J

T_stg

-65 to 150

-65 to 175

4.0

^oC

Mounting torque (non-lubricated threads)

Approximate allowable weight

17.0

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

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