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MBR6080ST PDF预览

MBR6080ST

更新时间: 2024-11-12 11:11:43
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
2页 46K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR6080ST 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247包装说明:ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.69其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:400 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:60 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:80 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR6080ST 数据手册

 浏览型号MBR6080ST的Datasheet PDF文件第2页 
MBR6040ST SERIES  
SCHOTTKY BARRIER RECTIFIERS  
VOLTAGE  
40 to 100 Volts CURRENT 60 Amperes  
0.615(15.60)MAX.  
FEATURES  
0.520(13.20)  
0.504(12.80)  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
0.185(4.70)  
0.169(4.30)  
0.402(10.20)  
0.385(9.80)  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
0.118(3.0)  
MIN.  
• High current capability  
• Guardring for overvoltage protection  
0.599(15.20)  
0.582(14.80)  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
0.103(2.60)  
0.090(2.30)  
0.071(1.80)  
0.055(1.40)  
0.095(2.40)  
0.078(2.00)  
0.050(1.25)  
0.037(0.95)  
MECHANICAL DATA  
• Case: TO-247S / TO-3PS molded plastic  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
0.025(0.62)  
0.014(0.38)  
0.223(5.65)  
0.206(5.25)  
0.223(5.65)  
0.206(5.25)  
• Mounting Position: Any  
• Weight: 0.1932 ounces, 5.4803 grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR6040ST MBR6045ST MBR6080ST MBR6090ST MBR60100ST  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
80  
56  
80  
60  
90  
63  
90  
100  
70  
Maximum RMS Voltage  
VRMS  
V
V
A
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
VDC  
100  
IF(AV)  
Peak Forward Surge Current : 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
VF  
IR  
400  
A
V
Maximum Forward Voltage at 30A per leg  
0.7  
0.79  
0.8  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
TJ=25 OC  
TJ=100OC  
0.1  
20  
0.05  
20  
mA  
Typical Thermal Resistance  
RJC  
1.5  
OC / W  
OC  
Operating Junction and Storage Temperature  
Range  
-55 to+150  
TJ,TSTG  
-65 to +175  
Note :  
Both Bonding and Chip structure are available.  
September 3,2010-REV.02  
PAGE . 1  

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