MBR6035PT - MBR60150PT
60 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
o
260 C/10 seconds,0.17”(4.3mm)from case
Mechanical Data
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Cases: JEDEC TO-3P/TO-247AD molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
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Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR
Symbol
Type Number
Units
6035 6045 6050 6060 6090 60100 60150
PT
35
24
35
PT
45
31
45
PT
50
35
50
PT
60
42
60
PT
90
63
90
PT
100
70
PT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
150
105
150
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
O
A
A
60
60
I(AV)
IFRM
IFSM
IRRM
at Tc=125 C
Peak Repetitive Forward Current (Rated VR, Square
o
Wave, 20KHz) at Tc=120 C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
A
A
420
1.0
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
O
IF=30A, Tc=25 C
0.84
0.70
0.60
0.82
0.75
0.92
1.02
0.98
O
VF
IF=30A, Tc=125 C
-
0.65
0.93
V
O
IF=60A, Tc=25 C
0.98
o
Maximum Instantaneous Reverse Current @Tc=25 C
o
1.0
30
0.1
5.0
1.0
mA
mA
at Rated DC Blocking Voltage Per Leg @ Tc=125 C
IR
20
10
(Note 1)
Voltage Rate of Change at (Rated VR)
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
V/uS
1,000
dV/dt
RθJC
TJ
o
1.2
C/W
o
-65 to +150
-65 to +175
C
o
TSTG
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
Version: A06