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MBR4035PT PDF预览

MBR4035PT

更新时间: 2024-09-20 22:27:51
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效局域网
页数 文件大小 规格书
2页 87K
描述
40A SCHOTTKY BARRIER RECTIFIER

MBR4035PT 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:TO-3P, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.32
Is Samacsys:N其他特性:LOW POWER LOSS, FREE WHEELING DIODE
应用:EFFICIENCY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:400 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:35 V
最大反向电流:1000 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

MBR4035PT 数据手册

 浏览型号MBR4035PT的Datasheet PDF文件第2页 
MBR4030PT - MBR4060PT  
40A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
TO-3P  
Dim  
A
B
C
D
E
Min  
3.20  
Max  
3.50  
·
·
·
4.59  
5.16  
A
B
20.80  
19.70  
2.10  
21.30  
20.20  
2.40  
H
·
·
J
S
R
G
H
J
0.51  
0.76  
C
D
15.90  
1.70  
16.40  
2.70  
K
K
L
3.10Æ  
3.50  
3.30Æ  
4.51  
L
P*  
*2 Places  
Q
Mechanical Data  
·
·
G
M
N
P
5.20  
5.70  
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Marking: Type Number  
Weight: 5.6 grams (approx.)  
Mounting Position: Any  
N
1.12  
1.22  
1.93  
2.18  
·
·
·
·
E
Q
R
S
2.97  
3.22  
M
M
11.70  
12.80  
4.30 Typical  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
4030PT 4035PT 4040PT 4045PT 4O50PT 4060PT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
@ TC = 125°C  
40  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
400  
A
Forward Voltage Drop  
@ IF = 20A, TC  
= 25°C  
0.70  
0.60  
0.80  
0.70  
VFM  
IRM  
V
@ IF = 20A, TC = 125°C  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC = 25°C  
@ TC = 125°C  
1.0  
100  
mA  
Cj  
Typical Junction Capacitance  
(Note 2)  
1100  
1.4  
pF  
K/W  
V/ms  
°C  
RqJc  
Typical Thermal Resistance Junction to Case  
Voltage Rate of Change (Rated VR)  
(Note 1)  
dV/dt  
Tj, TSTG  
10,000  
-65 to +150  
Operating and Storage Temperature Range  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS23019 Rev. E-2  
1 of 2  
MBR4030PT - MBR4060PT  

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