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MBR4035PT_15 PDF预览

MBR4035PT_15

更新时间: 2024-02-19 20:07:58
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 81K
描述
Dual Common Cathode Schottky Rectifier

MBR4035PT_15 数据手册

 浏览型号MBR4035PT_15的Datasheet PDF文件第2页浏览型号MBR4035PT_15的Datasheet PDF文件第3页浏览型号MBR4035PT_15的Datasheet PDF文件第4页 
MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
FEATURES  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Solder dip 275 °C max.10 s, per JESD 22-B106  
3
2
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TO-247AD (TO-3P)  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-247AD (TO-3P)  
IF(AV)  
40 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
35 V, 45 V, 50 V, 60 V  
400 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF  
0.60 V, 0.62 V  
150 °C  
TJ max.  
Package  
Diode variations  
TO-247AD (TO-3P)  
Common cathode  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum average forward rectified current TC = 125 °C  
IF(AV)  
40  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
400  
A
(1)  
Peak repetitive reverse surge current per diode  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
2.0  
1.0  
A
V/μs  
°C  
10 000  
Operating junction temperature range  
Storage temperature range  
-65 to +150  
-65 to +175  
TSTG  
°C  
Note  
(1)  
2.0 μs pulse width, f = 1.0 kHz  
Revision: 17-Aug-15  
Document Number: 88679  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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