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MBR4040DPT(TUBE) PDF预览

MBR4040DPT(TUBE)

更新时间： 2024-11-24 13:11:11
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效局域网
页数 文件大小 规格书
3页 60K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 40V V(RRM), Silicon,

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MBR4040DPT(TUBE) 技术参数

生命周期：Obsolete包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.68
Is Samacsys：N应用：GENERAL PURPOSE
外壳连接：ANODE AND CATHODE配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.7 VJESD-30 代码：R-PSFM-T3
最大非重复峰值正向电流：400 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：40 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified最大重复峰值反向电压：40 V
最大反向电流：10000 µA表面贴装：NO
技术：SCHOTTKY端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

MBR4040DPT(TUBE) 数据手册

 浏览型号MBR4040DPT(TUBE)的Datasheet PDF文件第2页浏览型号MBR4040DPT(TUBE)的Datasheet PDF文件第3页 
MBR4030PT - MBR4060PT  
40A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
·
·
·
·
Schottky Barrier Chip  
TO-3P  
Guard Ring Die Construction for Transient Protection  
Low Power Loss, High Efficiency  
Dim  
A
B
C
D
E
Min  
1.88  
4.68  
20.63  
18.5  
2.1  
Max  
2.08  
5.36  
22.38  
21.5  
2.4  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
A
B
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
H
·
Lead Free Finish, RoHS Compliant (Note 3)  
J
S
R
G
H
J
0.51  
15.38  
1.90  
2.9Æ  
3.78  
5.2  
0.76  
16.25  
2.70  
3.65Æ  
4.50  
5.7  
C
D
Mechanical Data  
K
·
Case: TO-3P  
K
L
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
L
P
N
Q
M
N
P
G
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
0.89  
1.82  
2.92  
11.70  
¾
1.53  
2.46  
3.23  
12.84  
6.10  
Terminals: Finish - Bright Tin. Plated Leads Solderable per  
MIL-STD-202, Method 208  
·
·
·
·
Polarity: As Marked on Body  
Ordering Information: See Last Page  
Marking: Type Number  
Q
R
S
E
M
M
Weight: 5.6 grams (approximate)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
4030PT 4035PT 4040PT 4045PT 4050PT 4060PT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
@ TC = 125°C  
40  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
400  
A
Forward Voltage Drop  
@ IF = 20A, TC  
= 25°C  
0.70  
0.60  
0.80  
0.70  
VFM  
IRM  
V
@ IF = 20A, TC = 125°C  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC = 25°C  
@ TC = 125°C  
1.0  
100  
mA  
CT  
Typical Total Capacitance  
(Note 2)  
1100  
1.4  
pF  
°C/W  
V/ms  
°C  
RqJC  
Typical Thermal Resistance Junction to Case  
Voltage Rate of Change (Rated VR)  
(Note 1)  
dV/dt  
Tj, TSTG  
10,000  
-65 to +150  
Operating and Storage Temperature Range  
Notes: 1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS23019 Rev. 8 - 2  
1 of 3  
MBR4030PT - MBR4060PT  
www.diodes.com  
ã Diodes Incorporated  
123

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