5秒后页面跳转
MBR4040PT PDF预览

MBR4040PT

更新时间: 2024-01-26 11:54:56
品牌 Logo 应用领域
SIRECTIFIER 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 123K
描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

MBR4040PT 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-247AD
包装说明:SIMILAR TO TO-247AD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
Is Samacsys:N其他特性:REVERSE ENERGY TESTED
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:400 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR4040PT 数据手册

 浏览型号MBR4040PT的Datasheet PDF文件第2页 
MBR4030PT thru MBR4045PT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
C
A
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
A
C
A
C(TAB)  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
A=Anode, C=Cathode, TAB=Cathode  
5.4  
6.2 0.212 0.244  
VRRM  
V
VRMS  
V
VDC  
V
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
MBR4030PT  
MBR4035PT  
MBR4040PT  
MBR4045PT  
30  
21  
30  
35  
40  
45  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
35  
24.5  
28  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
40  
45  
31.5  
N
1.5 2.49 0.087 0.102  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=125oC  
40  
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
400  
A
dv/dt  
Voltage Rate Of Change (Rated VR)  
IF=20A @TJ=25oC  
Maximum Forward  
Voltage (Note 1)  
10000  
V/us  
0.70  
0.60  
0.80  
0.75  
IF=20A @TJ=125oC  
IF=40A @TJ=25oC  
IF=40A @TJ=125oC  
VF  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
1.0  
100  
IR  
mA  
@TJ=125oC  
1.4  
oC/W  
pF  
oC  
ROJC  
CJ  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance Per Element (Note 3)  
Operating Temperature Range  
700  
-55 to +150  
-55 to +175  
TJ  
TSTG  
Storage Temperature Range  
oC  
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.  
2. Thermal Resistance Junction To Case.  
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-247AD molded plastic  
* Polarity: As marked on the body  
* Weight: 0.2 ounces, 5.6 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

与MBR4040PT相关器件

型号 品牌 获取价格 描述 数据表
MBR4040PT_16 PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT_T0_00001 PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT_T0_10001 PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT-AU PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT-AU_16 PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT-AU_T0_000A1 PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT-AU_T0_100A1 PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR4040PT-B DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, Silicon,
MBR4040PT-BT MCC

获取价格

Rectifier Diode,
MBR4040ST PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS