MBR40xxxCG-Q1 Series
40A Surface Mount Schottky Barrier
Rectifiers - 40V-200V
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TO-263AB/D2PAK
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.402(10.20)
0.386(9.80)
0.189(4.80)
0.165(4.20)
0.058(1.48)
0.043(1.08)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.433(11.00)
0.374(9.50)
Compliant to Halogen-free
Suffix "-Q1" for AEC-Q101
•
•
0.012(0.30)
0.004(0.10)
0.024(0.60)
0.012(0.30)
0.236(6.0)
0.176(4.4)
Mechanical data
0.043(1.10)
0.024(0.60)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, TO-263AB / D2PAK
0.205(5.20)
0.189(4.80)
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
Symbol
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
IO
40.0
Forward rectified current
See Fig.1
IFSM
200
Forward surge current
Reverse current
A
8.3ms single half sine-wave (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
0.1
20
IR
mA
OC/W
OC
RθJC
TSTG
Thermal resistance
Storage temperature
Junction to case
1.6
+175
-65
Operating
*1
*3
VR
(V)
*4
*2
VRMS
(V)
VF
SYMBOLS
VRRM
(V)
temperature
TJ, (OC)
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
40
45
28
40
MBR4040CG-Q1
0.70
31.5
35
45
MBR4045CG
MBR4050CG
-Q1
-Q1
*3 Continuous reverse voltage
50
50
0.80
0.85
0.92
-55 to +150
*4 Maximum forward voltage
IF = 20.0A, 25°C
60
42
60
MBR4060CG-Q1
MBR4080CG-Q1
80
56
80
MBR40100CG
MBR40150CG
MBR40200CG
-Q1
100
150
200
70
100
150
200
-Q1
-Q1
105
140
-55 to +175
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
Document ID
AS-1060042
Issued Date
2018/03/08
Revised Date
2022/05/25
Revision
E
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