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MBR4035PT_01 PDF预览

MBR4035PT_01

更新时间: 2024-09-21 04:16:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 55K
描述
Schottky Rectifiers

MBR4035PT_01 数据手册

 浏览型号MBR4035PT_01的Datasheet PDF文件第2页浏览型号MBR4035PT_01的Datasheet PDF文件第3页 
MBR4035PT - MBR4060PT  
Features  
Low power loss, high efficiency.  
High surge capacity.  
For use in low voltage, high frequency  
inverters, free wheeling, and polarity  
protection applications.  
PIN 1  
PIN 3  
+
CASE  
PIN 2  
Metal silicon junction, majority carrier  
conduction.  
High current capacity, low forward  
voltage drop.  
2
3
1
TO-3P/TO-247AD  
Guard ring for over voltage protection.  
Schottky Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
4035PT  
4045PT 4050PT 4060PT  
45 50 60  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
35  
V
A
Average Rectified Forward Current  
.375 " lead length @ TA = 125°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
40  
IFSM  
400  
A
Storage Temperature Range  
-65 to +175  
-65 to +150  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Lead  
3.0  
1.2  
W
RθJL  
°C/W  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Parameter  
Units  
4035PT  
0.70  
0.60  
4045PT 4050PT 4060PT  
VF  
0.72  
0.62  
-
-
V
V
V
V
Forward Voltage IF = 20 A, TC = 25°C  
IF = 20 A, T = 125 C  
°
C
0.80  
0.75  
I
F = 40 A, TC = 25°C  
IF = 40 A, T = 125 C  
°
C
IR  
1.0  
100  
mA  
mA  
Reverse Current @ rated VR TA = 25°C  
T = 125 C  
°
A
IRRM  
Peak Repetitive Reverse Surge Current  
2.0  
1.0  
A
2.0 us Pulse Width, f = 1.0 KHz  
2001 Fairchild Semiconductor Corporation  
MBR4035PT - MBR4060PT, Rev. C  

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